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Datasheet K2373 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 36 | K2312 | MOSFET ( Transistor ) - 2SK2312 2SK2312
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV)
2
2SK2312
Chopper Regulator, DC−DC Converter and Motor Drive Applications
z 4-V gate drive z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) |
 Toshiba Semiconductor |
 |
| 35 | K2313 | MOSFET ( Transistor ) - 2SK2313 2SK2313
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV)
2SK2313
Chopper Regulator, DC−DC Converter and Motor Drive Applications
Unit: mm
z 4-V gate drive
z Low drain−source ON resistance : RDS (ON) = 8 mΩ (typ.)
z High forward transfer admittance : |Yfs| = 60 S |
Toshiba Semiconductor |
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| 34 | K2313 | MOSFET ( Transistor ) - 2SK2313 2SK2313
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV)
2SK2313
Chopper Regulator, DC−DC Converter and Motor Drive Applications
Unit: mm
z 4-V gate drive
z Low drain−source ON resistance : RDS (ON) = 8 mΩ (typ.)
z High forward transfer admittance : |Yfs| = 60 S |
Toshiba Semiconductor |
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| 33 | K2324 | MOSFET ( Transistor ) - 2SK2324 Power F-MOS FETs
2SK758
2SK2324(Tentative)
Silicon N-Channel Power F-MOS
s Features
q Avalanche Unit : mm
4.6±0.2 ø3.2±0.1 9.9±0.3 2.9±0.2
energy capability guaranteed switching
q High-speed q Low q No
ON-resistance
15.0±0.3 4.1±0.2 8.0±0.2 Solder Dip 3.0±0.2
secondary breakdown
s Ap |
 Panasonic |
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