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K1S3216BCD даташитФункция этой детали – «2mx16 Bit Page Mode Uni-transistor Random Access Memory». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
K1S3216BCD | Samsung semiconductor |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory
K1S3216BCD
Document Title
2Mx16 bit Page Mode Uni-Transistor Random Access Memory
UtRAM
Revision History
Revision No. History
0.0 1.0 Initial Draft Finalize
Draft Date
Remark
November 02, 2004 Preliminary Apri 06, 2005 Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG bra |
Это результат поиска, начинающийся с "1S3216BCD", "K1S3216" |
Номер в каталоге | Производители | Описание | |
K1S321611C | Samsung |
2Mx16 bit Uni-Transistor Random Access Memory Preliminary
K1S321611C
Document Title
2Mx16 bit Uni-Transistor Random Access Memory
UtRAM
Revision History
Revision No. History
0.0 0.1 Initial Draft Revised - Deleted 60ns Speed Bin
Draft Date
January 16, 2003 June 13, 2003
Remark
Advanced Preliminary
0.2
Revised August 1 |
|
K1S321611C-FI70 | Samsung |
2Mx16 bit Uni-Transistor Random Access Memory Preliminary
K1S321611C
Document Title
2Mx16 bit Uni-Transistor Random Access Memory
UtRAM
Revision History
Revision No. History
0.0 0.1 Initial Draft Revised - Deleted 60ns Speed Bin
Draft Date
January 16, 2003 June 13, 2003
Remark
Advanced Preliminary
0.2
Revised August 1 |
|
K1S321611C-I | Samsung |
2Mx16 bit Uni-Transistor Random Access Memory Preliminary
K1S321611C
Document Title
2Mx16 bit Uni-Transistor Random Access Memory
UtRAM
Revision History
Revision No. History
0.0 0.1 Initial Draft Revised - Deleted 60ns Speed Bin
Draft Date
January 16, 2003 June 13, 2003
Remark
Advanced Preliminary
0.2
Revised August 1 |
|
K1S321615M | Samsung semiconductor |
2Mx16 bit Uni-Transistor Random Access Memory K1S321615M
Document Title
2Mx16 bit Uni-Transistor Random Access Memory
UtRAM
Revision History
Revision No. History
0.0 Initial Draft - Design target Revised - Change package type from FBGA to TBGA. - Improve operating current from 30mA to 25mA. - Change in |
|
K1S32161CC | Samsung semiconductor |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory Preliminary
K1S32161CC
Document Title
2Mx16 bit Page Mode Uni-Transistor Random Access Memory
UtRAM
Revision History
Revision No. History
0.0 Initial Draft
Draft Date
July 14, 2003
Remark
Preliminary
The attached datasheets are provided by SAMSUNG Elect |
|
K1S3216B1C | Samsung semiconductor |
2Mx16 bit Uni-Transistor Random Access Memory Preliminary
K1S3216B1C
Document Title
2Mx16 bit Uni-Transistor Random Access Memory
UtRAM
Revision History
Revision No. History
0.0 0.1 Initial Draft Revised - Changed Package Type from 48 TBGA into 48 FBGA 6.0 x 8.0 - Changed Standby Current(CMOS) from 80 |
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Последние обновления
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2N3904 | Unisonic Technologies |
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