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K1S3216BCD даташит

Функция этой детали – «2mx16 Bit Page Mode Uni-transistor Random Access Memory».



Показать результаты поиска

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Номер в каталоге Производители Описание PDF
K1S3216BCD Samsung semiconductor
Samsung semiconductor
  2Mx16 bit Page Mode Uni-Transistor Random Access Memory

K1S3216BCD Document Title 2Mx16 bit Page Mode Uni-Transistor Random Access Memory UtRAM Revision History Revision No. History 0.0 1.0 Initial Draft Finalize Draft Date Remark November 02, 2004 Preliminary Apri 06, 2005 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG bra
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Это результат поиска, начинающийся с "1S3216BCD", "K1S3216"

Номер в каталоге Производители Описание PDF
K1S321611C Samsung
Samsung

2Mx16 bit Uni-Transistor Random Access Memory

Preliminary K1S321611C Document Title 2Mx16 bit Uni-Transistor Random Access Memory UtRAM Revision History Revision No. History 0.0 0.1 Initial Draft Revised - Deleted 60ns Speed Bin Draft Date January 16, 2003 June 13, 2003 Remark Advanced Preliminary 0.2 Revised August 1
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K1S321611C-FI70 Samsung
Samsung

2Mx16 bit Uni-Transistor Random Access Memory

Preliminary K1S321611C Document Title 2Mx16 bit Uni-Transistor Random Access Memory UtRAM Revision History Revision No. History 0.0 0.1 Initial Draft Revised - Deleted 60ns Speed Bin Draft Date January 16, 2003 June 13, 2003 Remark Advanced Preliminary 0.2 Revised August 1
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K1S321611C-I Samsung
Samsung

2Mx16 bit Uni-Transistor Random Access Memory

Preliminary K1S321611C Document Title 2Mx16 bit Uni-Transistor Random Access Memory UtRAM Revision History Revision No. History 0.0 0.1 Initial Draft Revised - Deleted 60ns Speed Bin Draft Date January 16, 2003 June 13, 2003 Remark Advanced Preliminary 0.2 Revised August 1
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K1S321615M Samsung semiconductor
Samsung semiconductor

2Mx16 bit Uni-Transistor Random Access Memory

K1S321615M Document Title 2Mx16 bit Uni-Transistor Random Access Memory UtRAM Revision History Revision No. History 0.0 Initial Draft - Design target Revised - Change package type from FBGA to TBGA. - Improve operating current from 30mA to 25mA. - Change in
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K1S32161CC Samsung semiconductor
Samsung semiconductor

2Mx16 bit Page Mode Uni-Transistor Random Access Memory

Preliminary K1S32161CC Document Title 2Mx16 bit Page Mode Uni-Transistor Random Access Memory UtRAM Revision History Revision No. History 0.0 Initial Draft Draft Date July 14, 2003 Remark Preliminary The attached datasheets are provided by SAMSUNG Elect
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K1S3216B1C Samsung semiconductor
Samsung semiconductor

2Mx16 bit Uni-Transistor Random Access Memory

Preliminary K1S3216B1C Document Title 2Mx16 bit Uni-Transistor Random Access Memory UtRAM Revision History Revision No. History 0.0 0.1 Initial Draft Revised - Changed Package Type from 48 TBGA into 48 FBGA 6.0 x 8.0 - Changed Standby Current(CMOS) from 80
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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