|
K1165 даташитФункция этой детали – «SilICon N Channel Mos Fet». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
K1165 | Renesas Technology |
Silicon N Channel MOS FET 2SK1165, 2SK1166
Silicon N Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
1 2 3
REJ03G0914-0200 (Previous: ADE-208-1252)
Rev.2.00 Sep 07, 2005
D
G
1. Gate 2. Drain
(Flange)
3. Source
S
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1165, 2SK1166
Absolute Maximum Ratings
Item
Drain to sour |
Это результат поиска, начинающийся с "1165", "K1" |
Номер в каталоге | Производители | Описание | |
1165892 | Multicomp |
High power NPN silicon power transistors 1165892
High power NPN silicon power transistors.
These devices are designed for linear amplifiers, series pass regulators, and inductive
switching applications.
Features:
• Forward biased second breakdown current capability IS/b = 2.5 A dc at VCE = 60V dc.
• Pb-free package |
|
1165899 | Multicomp |
High power NPN silicon transistors 1165899
TO-3
High power NPN silicon transistors.
Features:
• High voltage capability. • High current capability. • Fast switching speed.
Applications:
Switch mode power supplies. Flyback and forward single transistor low power converters.
Description:
The BUX48/A silicon m |
|
1165939 | Multicomp |
Transistors 1165939
Features:
• 70W at 25°C case temperature. • 8A continuous collector current. • Minimum hFE of 1000 at 4V, 4A.
TO-220 Package (Top View)
Pin 2 is in electrical contact with the mounting base.
Absolute maximum ratings at 25°C case temperature (unless otherwise no |
|
2SB1165 | Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors Ordering number:2046A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1165/2SD1722
50V/5A Switching Applications
Applications
· Relay drivers, high-speed inverters, converters.
Features
· Low collector-to-emitter saturation voltage. · High fT. · Excellent linearity of hFE. |
|
2SB1165 | SavantIC |
SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1165
DESCRIPTION ·With TO-126 package ·Complement to type 2SD1722 ·Low collector saturation voltage ·Fast switching time APPLICATIONS ·For use in relay drivers,high-speed in |
|
2SC1165 | Toshiba |
UHF Band Power Amplifier Applications |
[1]  
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |