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J202 даташитФункция этой детали – «Jfet Low Frequency / Low Noise». |
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Номер в каталоге | Производители | Описание | |
J202 | Vishay |
N-Channel JFETs N-Channel JFETs
J/SST201 Series
Vishay Siliconix
PRODUCT SUMMARY
Part Number
J/SST201 J/SST202 J/SST204
VGS(off) (V)
−0.3 to −1.5 −0.8 to −4 −0.3 to −2
V(BR)GSS Min (V)
−40 −40 −25
gfs Min (mS)
0.5 1 0.5
IDSS Min (mA)
0.2 0.9 0.2
J201 J202 J204
SST201 SST202 SST204
FEATURES
D Low Cutoff Voltage: J201 <1.5 V D High Input Impedance D Very Low Noise D High Gain: AV = 80 @ 20 mA
BENEFITS
D Full Performance from Low Voltage Power Supply: Down to 1.5 V
D Low Signal Loss/System Error D High System |
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J202 | Motorola Semiconductors |
JFET Low Frequency / Low Noise MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
JFETs Low Frequency/
Low Noise
N–Channel — Depletion
1 DRAIN
J202
3 GATE
2 SOURCE
MAXIMUM RATINGS
Rating
Symbol
Value
Drain – Source Voltage
VDS
40
Drain – Gate Voltage
Gate – Source Voltage
Gate Current
Total Device Dissipation @ TA = 25°C Derate above 25°C
VDG VGS
IG PD
40 40
50
310 2.82
Storage Temperature Range
Tstg – 65 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic
OFF CHARACTERISTICS
Gate – Source Brea |
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J202 | Micross |
Amplifier J202 N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix J202 The J202 is a high gain N-Channel JFET
This n-channel JFET is optimised for high gain. The part is particularly suitable for use in low power or high impedance amplifiers. The TO-92 package is well suited for cost sensitive applications and mass production. (See Packaging Information). FEATURES DIRECT REPLACEMENT FOR SILICONIX J202 LOW CUT OFF VOLTAGE VGS(off) ≤ 1.5 HIGH GAIN AV = 80 V/V ABSOLUTE MAXIMUM RATINGS @ 25 |
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J202 | Linear Integrated Systems |
HIGH GAIN N-CHANNEL JFET J/SST201 SERIES
Linear Integrated Systems
FEATURES DIRECT REPLACEMENT FOR SILICONIX J/SST201 SERIES LOW CUTOFF VOLTAGE HIGH GAIN ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation Maximum Current Forward Gate Current Maximum Voltages Gate to Drain Voltage Gate to Source Voltage -40V -40V 50mA 350mW -65 to +150 °C -55 to +135 °C
1
HIGH GAIN N-CHANNEL JFET
VGS(off) ≤ 1.5V AV = 80 V/V |
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J202 | InterFET |
N-Channel Silicon Junction Field-Effect Transistor B-54
J201, J202 N-Channel Silicon Junction Field-Effect Transistor
01/99
¥ Audio Amplifiers ¥ General Purpose Amplifiers
Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating
– 40 V 50 mA 360 mW 3.27 mW/°C
At 25°C free air temperature: Static Electrical Characteristics
Gate Source Breakdown Voltage Gate Reverse Current Gate Operating Current Gate Source Cutoff Voltage Drain Saturation Current ( |
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J202 | Fairchild Semiconductor |
N-Channel General Purpose Amplifier J201 - J202 / MMBFJ201 - MMBFJ203 — N-Channel General Purpose Amplifier
J201 - J202 / MMBFJ201 - MMBFJ203
N-Channel General Purpose Amplifier
January 2008
• This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. • Sourced from Process 52.
TO-92
Marking J201 1 J202 1. Drain 2. Source 3. Gate
SOT-23 3
2
Marking MMBFJ201 : 62P 1 MMBFJ202 : 62Q
1. Drain 2. Source 3. Gate
Absolute Maximum Ratings * Ta=25°C unless otherwise noted
Symbol
Param |
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J202 | Calogic LLC |
N-Channel JFET General Purpose Amplifier N-Channel JFET General Purpose Amplifier
CORPORATION
J201 – J204 / SST201 – SST204
FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Temperature Range . . . . . . . . . . . . . -55oC to +150oC Operating Temperature Range . . . . . . . . . . . -55oC to +135oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power |
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Последние обновления
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