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J202 даташит

Функция этой детали – «Jfet Low Frequency / Low Noise».



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Номер в каталоге Производители Описание PDF
J202 Vishay
Vishay
  N-Channel JFETs

N-Channel JFETs J/SST201 Series Vishay Siliconix PRODUCT SUMMARY Part Number J/SST201 J/SST202 J/SST204 VGS(off) (V) −0.3 to −1.5 −0.8 to −4 −0.3 to −2 V(BR)GSS Min (V) −40 −40 −25 gfs Min (mS) 0.5 1 0.5 IDSS Min (mA) 0.2 0.9 0.2 J201 J202 J204 SST201 SST202 SST204 FEATURES D Low Cutoff Voltage: J201 <1.5 V D High Input Impedance D Very Low Noise D High Gain: AV = 80 @ 20 mA BENEFITS D Full Performance from Low Voltage Power Supply: Down to 1.5 V D Low Signal Loss/System Error D High System
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J202 Motorola Semiconductors
Motorola Semiconductors
  JFET Low Frequency / Low Noise

MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs Low Frequency/ Low Noise N–Channel — Depletion 1 DRAIN J202 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Drain – Source Voltage VDS 40 Drain – Gate Voltage Gate – Source Voltage Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C VDG VGS IG PD 40 40 50 310 2.82 Storage Temperature Range Tstg – 65 to +150 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Gate – Source Brea
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J202 Micross
Micross
  Amplifier

J202 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J202 The J202 is a high gain N-Channel JFET This n-channel JFET is optimised for high gain. The part is particularly suitable for use in low power or high impedance amplifiers. The TO-92 package is well suited for cost sensitive applications and mass production. (See Packaging Information). FEATURES  DIRECT REPLACEMENT FOR SILICONIX J202  LOW CUT OFF VOLTAGE  VGS(off) ≤ 1.5  HIGH GAIN  AV = 80 V/V  ABSOLUTE MAXIMUM RATINGS @ 25
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J202 Linear Integrated Systems
Linear Integrated Systems
  HIGH GAIN N-CHANNEL JFET

J/SST201 SERIES Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR SILICONIX J/SST201 SERIES LOW CUTOFF VOLTAGE HIGH GAIN ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation Maximum Current Forward Gate Current Maximum Voltages Gate to Drain Voltage Gate to Source Voltage -40V -40V 50mA 350mW -65 to +150 °C -55 to +135 °C 1 HIGH GAIN N-CHANNEL JFET VGS(off) ≤ 1.5V AV = 80 V/V
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J202 InterFET
InterFET
  N-Channel Silicon Junction Field-Effect Transistor

B-54 J201, J202 N-Channel Silicon Junction Field-Effect Transistor 01/99 ¥ Audio Amplifiers ¥ General Purpose Amplifiers Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating – 40 V 50 mA 360 mW 3.27 mW/°C At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Operating Current Gate Source Cutoff Voltage Drain Saturation Current (
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J202 Fairchild Semiconductor
Fairchild Semiconductor
  N-Channel General Purpose Amplifier

J201 - J202 / MMBFJ201 - MMBFJ203 — N-Channel General Purpose Amplifier J201 - J202 / MMBFJ201 - MMBFJ203 N-Channel General Purpose Amplifier January 2008 • This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. • Sourced from Process 52. TO-92 Marking J201 1 J202 1. Drain 2. Source 3. Gate SOT-23 3 2 Marking MMBFJ201 : 62P 1 MMBFJ202 : 62Q 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * Ta=25°C unless otherwise noted Symbol Param
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J202 Calogic  LLC
Calogic LLC
  N-Channel JFET General Purpose Amplifier

N-Channel JFET General Purpose Amplifier CORPORATION J201 – J204 / SST201 – SST204 FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Temperature Range . . . . . . . . . . . . . -55oC to +150oC Operating Temperature Range . . . . . . . . . . . -55oC to +135oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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