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J174 даташитФункция этой детали – «P-channel Jfet Switch». |
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Номер в каталоге | Производители | Описание | |
J174 | Vishay |
P-Channel JFETs J/SST174/175/176/177 Series
Vishay Siliconix
P-Channel JFETs
J174 J175 J176 J177
SST174 SST175 SST176 SST177
PRODUCT SUMMARY
Part Number
J/SST174 J/SST175 J/SST176 J/SST177
VGS(off) (V)
5 to 10 3 to 6 1 to 4 0.8 to 2.25
rDS(on) Max (W)
85 125 250 300
ID(off) Typ (pA)
–10 –10 –10 –10
tON Typ (ns)
25 25 25 25
FEATURES
D Low On-Resistance: J174 <85 W D Fast Switching—tON: 25 ns D Low Leakage: –10 pA D Low Capacitance: 5 pF D Low Insertion Loss
BENEFITS
D Low Error Voltage D High-Speed Analog Circuit P |
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J174 | NXP Semiconductors |
P-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS
DATA SHEET
J174; J175; J176; J177 P-channel silicon field-effect transistors
Product specification File under Discrete Semiconductors, SC07 April 1995
Philips Semiconductors
Product specification
P-channel silicon field-effect transistors
DESCRIPTION Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended for application with analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and source connections. PINNING 1 = |
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J174 | New Jersey Semiconductor |
Trans JFET P-CH 135mA 2-Pin TO-92 |
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J174 | Motorola Semiconductors |
JFET CHOPPER TRANSISTOR J174 J 175 J176 J177
MAXIMUM RATINGS
Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Gate Current
@Total Device Dissipation Ta = 25°C
Derate above 25°C Storage Temperature Range
Symbol vDs Vdg VGS
'G
PD
Tstg
Value 30 30 30 50 350
2.8
- 65 to + 1 50
Unit
Vdc
Vdc
Vdc
mA
mW
mW/°C
°C
ELECTRICAL CHARACTERISTICS |
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J174 | Micross |
Switching J174 P-CHANNEL JFET
Linear Systems replaces discontinued Siliconix J174
The J174 is a single P-Channel JFET switch
This p-channel analog switch is designed to provide low on-resistance and fast switching. When used in combination with the complimentary J/SST111 nchannel family, the J174 simplifies series-shunt switching applications . Low Error Voltage High-Speed Analog Circuit Performance Negligible “Off-Error,” Excellent Accuracy Good Frequency Response Eliminates Additional Buffering FEATURES DI |
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J174 | Linear Integrated Systems |
SINGLE P-CHANNEL JFET SWITCH J/SST174 SERIES
Linear Integrated Systems
FEATURES Direct Replacement For SILICONIX J/SST174 SERIES LOW ON RESISTANCE LOW GATE OPERATING CURRENT ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Junction Operating Temperature Maximum Power Dissipation Continuous Power Dissipation Maximum Currents Gate Current Maximum Voltages Gate to Drain Voltage Gate to Source Voltage VGDS = 30V VGSS = 30V IG = -50mA 350mW -55 to 150°C -55 to 135°C
D G S 1 2 3
1
SINGLE P-CHANNEL JF |
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J174 | Fairchild Semiconductor |
P-Channel Switch J174 / J175 / J176 / J177 / MMBFJ175 / MMBFJ176 / MMBFJ177
J174 J175 J176 J177
MMBFJ175 MMBFJ176 MMBFJ177
G
D S G
TO-92
D
SOT-23
Mark: 6W / 6X / 6Y
S
P-Channel Switch
This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 88.
Absolute Maximum Ratings*
Symbol
VDG VGS IGF TJ ,Tstg Drain-Gate Voltage Gate-Source Voltage Forward Gate Current
TA = 25°C unless otherwise noted
Parameter
Value
- 30 30 50 -55 to +150
Units
V V mA °C
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J174 | Calogic LLC |
P-Channel JFET Switch P-Channel JFET Switch
CORPORATION
J174 – J177 / SST174 – SST177
FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . . 30V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Temperature Range . . . . . . . . . . . . . -55oC to +150oC Operating Temperature Range . . . . . . . . . . . -55oC to +135oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . . 300oC Power Dissipation . . . |
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Последние обновления
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2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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