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J112 даташит ( Даташиты, Даташиты )

Номер Номер в каталоге Описание Производители PDF
12 J112   N-Channel JFETs

J/SST111 Series Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) J/SST111 J/SST112 J/SST113 –3 to –10 –1 to –5 v–3 30 50 100 ID(off) Typ (pA) 5 5 5 tON Typ (ns) 4 4 4 J111 SST111 J112 SST112 J113 SST113 FEATURES D Low On-Resistance: 111 < 30 W D Fast Switching—tON: 4 ns D Low Leakage: 5 pA D Low Capacitance: 3 pF D Low Insertion Loss BENEFITS D Low Error Voltage D High-Speed Analog Circuit Performance D Negligible “Off-Error,” Excellent Accuracy D Good
Vishay
Vishay
J112 pdf Даташит
11 J112   (J111 / J112) JFET Chopper Transistors N-Channel

J111, J112 JFET Chopper Transistors N−Channel — Depletion Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Drain −Gate Voltage Gate −Source Voltage Gate Current Total Device Dissipation @ TA = 25°C Derate above = 25°C Lead Temperature Operating and Storage Junction Temperature Range Symbol VDG VGS IG PD TL TJ, Tstg Value −35 −35 50 350 2.8 300 −65 to +150 Unit Vdc Vdc mAdc mW mW/°C °C °C http://onsemi.com 1 DRAIN 3 GATE 2 SOURCE Maximum ratings are those
ON Semiconductor
ON Semiconductor
J112 pdf Даташит
10 J112   N-channel silicon field-effect transistors

DISCRETE SEMICONDUCTORS DATA SHEET J111; J112; J113 N-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 July 1993 Philips Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc. FEATURES • High speed switching • Interchangeability of drain and source connections
NXP
NXP
J112 pdf Даташит
9 J112   Trans JFET N-CH 3-Pin TO-92 Bulk

New Jersey Semiconductor
New Jersey Semiconductor
J112 pdf Даташит
8 J112   JFET Chopper Transistor (N-Channel- Depletion)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by J112/D JFET Chopper Transistor N–Channel — Depletion 1 DRAIN 3 GATE J112 2 SOURCE MAXIMUM RATINGS Rating Drain – Gate Voltage Gate – Source Voltage Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Lead Temperature Operating and Storage Junction Temperature Range Symbol VDG VGS IG PD TL TJ, Tstg Value – 35 – 35 50 350 2.8 300 – 65 to +150 Unit Vdc Vdc mAdc mW mW/°C °C °C CASE 29–04, STYLE 5 TO–92 (TO–226AA) 1 2
Motorola  Inc
Motorola Inc
J112 pdf Даташит
7 J112   Switching

J112 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J112 This n-channel JFET is optimised for low noise high performance switching. The part is particularly suitable for use in low noise audio amplifiers. The TO-92 package is well suited for cost sensitive applications and mass production. (See Packaging Information). FEATURES  DIRECT REPLACEMENT FOR SILICONIX J112  LOW GATE LEAKAGE CURRENT  5pA  FAST SWITCHING  t(on) ≤ 4ns  ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise note
Micross
Micross
J112 pdf Даташит
6 J112   N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS

Micro Electronics
Micro Electronics
J112 pdf Даташит
5 J112   SINGLE N-CHANNEL JFET

J/SST111 SERIES Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR SILICONIX J/SST111 SERIES LOW GATE LEAKAGE CURRENT FAST SWITCHING ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Junction Operating Temperature Maximum Power Dissipation Continuous Power Dissipation (J) Continuous Power Dissipation (SST) Maximum Currents Gate Current Maximum Voltages Gate to Drain Gate to Source -35V -35V 50mA 360mW 350mW -55 to 150°C -55 to 135°C D S G 1 2 3 TO 92 SINGLE N
Linear Integrated Systems
Linear Integrated Systems
J112 pdf Даташит


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