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J112 даташит электронных компонентов


J112 Datasheet ( Даташиты )

Номер Номер в каталоге Описание Производители PDF
12 J112  J112 Даташит - Motorola  Inc JFET Chopper Transistor (N-Channel- Depletion)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by J112/D JFET Chopper Transistor N–Channel — Depletion 1 DRAIN 3 GATE J112 2 SOURCE MAXIMUM RATINGS Rating Drain – Gate Voltage Gate – Source Voltage Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Lead Temperature Operating and Storage Junction Temperature Range Symbol VDG VGS IG PD TL TJ, Tstg Value – 35 – 35 50 350 2.8 300 – 65 to +150 Unit Vdc Vdc mAdc mW mW/°C °C °C CASE 29–04, STYLE 5
Motorola  Inc
Motorola Inc
PDF
11 J112  J112 Даташит - ON Semiconductor JFET Chopper Transistor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by J112/D JFET Chopper Transistor N–Channel — Depletion 1 DRAIN 3 GATE J112 2 SOURCE MAXIMUM RATINGS Rating Drain – Gate Voltage Gate – Source Voltage Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Lead Temperature Operating and Storage Junction Temperature Range Symbol VDG VGS IG PD TL TJ, Tstg Value – 35 – 35 50 350 2.8 300 – 65 to +150 Unit Vdc Vdc mAdc mW mW/°C °C °C CASE 29–04, STYLE 5
ON Semiconductor
ON Semiconductor
PDF
10 J112  J112 Даташит - Micro Electronics N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS

Micro Electronics
Micro Electronics
PDF
9 J112  J112 Даташит - NXP N-channel silicon field-effect transistors

DISCRETE SEMICONDUCTORS DATA SHEET J111; J112; J113 N-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 July 1993 Philips Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc. FEATURES • High speed switching • Interchangeability of drain
NXP
NXP
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8 J112  J112 Даташит - Fairchild Semiconductor N-Channel Switch

J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel Switch January 2015 J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 N-Channel Switch Features • This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. • Sourced from process 51 • Source & Drain are interchangeable. G SD TO-92 Figure 1. J111 / J112 / J113 Device Package Ordering Information Part Number J111 J111_D26Z J111_D74Z J112 J112_D26Z J112_D27Z J11
Fairchild Semiconductor
Fairchild Semiconductor
PDF
7 J112  J112 Даташит - Calogic  LLC N-Channel JFET Switch

N-Channel JFET Switch CORPORATION J111 - J113 / SST111 – SST113 FEATURES Low Cost Automated Insertion Package Low Insertion Loss No Offset or Error Voltage Generated By Closed Switch Purely Resistive High Isolation Resistance From Driver Fast Switching Short Sample and Hold Aperture Time • • • • • • APPLICATIONS Analog Switches Choppers Commutators • • • - PIN CONFIGURATION SOT-23 G TO-92 ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Gate-Drain or Gat
Calogic  LLC
Calogic LLC
PDF
6 J112  J112 Даташит - Linear Integrated Systems SINGLE N-CHANNEL JFET

J/SST111 SERIES Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR SILICONIX J/SST111 SERIES LOW GATE LEAKAGE CURRENT FAST SWITCHING ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Junction Operating Temperature Maximum Power Dissipation Continuous Power Dissipation (J) Continuous Power Dissipation (SST) Maximum Currents Gate Current Maximum Voltages Gate to Drain Gate to Source -35V -35V 50mA 360mW 350mW -55 to 150°C -55 to 135°C D
Linear Integrated Systems
Linear Integrated Systems
PDF
5 J112  J112 Даташит - ON Semiconductor (J111 / J112) JFET Chopper Transistors N-Channel

J111, J112 JFET Chopper Transistors N−Channel — Depletion Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Drain −Gate Voltage Gate −Source Voltage Gate Current Total Device Dissipation @ TA = 25°C Derate above = 25°C Lead Temperature Operating and Storage Junction Temperature Range Symbol VDG VGS IG PD TL TJ, Tstg Value −35 −35 50 350 2.8 300 −65 to +150 Unit Vdc Vdc mAdc mW mW/°C °C °C http://onsemi.com 1 DRAIN 3 GATE 2 SOURCE M
ON Semiconductor
ON Semiconductor
PDF
4 J112  J112 Даташит - Micross Switching

J112 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J112 This n-channel JFET is optimised for low noise high performance switching. The part is particularly suitable for use in low noise audio amplifiers. The TO-92 package is well suited for cost sensitive applications and mass production. (See Packaging Information). FEATURES  DIRECT REPLACEMENT FOR SILICONIX J112  LOW GATE LEAKAGE CURRENT  5pA  FAST SWITCHING  t(on) ≤ 4ns  ABSOLUTE MAXIMUM RATINGS @ 25°C
Micross
Micross
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3 J112  J112 Даташит - ETC MOS FET

ETC
ETC
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