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J112 даташит ( Datasheet PDF )


J112 Datasheet PDF ( Даташиты, Даташиты )

Номер Номер в каталоге Описание Производители PDF
12 J112   JFET Chopper Transistor (N-Channel- Depletion)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by J112/D JFET Chopper Transistor N–Channel — Depletion 1 DRAIN 3 GATE J112 2 SOURCE MAXIMUM RATINGS Rating Drain – Gate Voltage Gate – Source Voltage Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Lead Temperature Operating and Storage Junction Temperature Range Symbol VDG VGS IG PD TL TJ, Tstg Value – 35 – 35 50 350 2.8 300 – 65 to +150 Unit Vdc Vdc mAdc mW mW/°C °C °C CASE 29–04, STYLE 5 TO–92 (TO–226AA) 1 2
Motorola  Inc
Motorola Inc
J112 pdf Даташит
11 J112   N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS

Micro Electronics
Micro Electronics
J112 pdf Даташит
10 J112   N-channel silicon field-effect transistors

DISCRETE SEMICONDUCTORS DATA SHEET J111; J112; J113 N-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 July 1993 Philips Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc. FEATURES • High speed switching • Interchangeability of drain and source connections
NXP
NXP
J112 pdf Даташит
9 J112   N-Channel Switch

J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel Switch January 2015 J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 N-Channel Switch Features • This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. • Sourced from process 51 • Source & Drain are interchangeable. G SD TO-92 Figure 1. J111 / J112 / J113 Device Package Ordering Information Part Number J111 J111_D26Z J111_D74Z J112 J112_D26Z J112_D27Z J112_D74Z J113 J113_D74Z J11
Fairchild Semiconductor
Fairchild Semiconductor
J112 pdf Даташит
8 J112   N-Channel JFET Switch

N-Channel JFET Switch CORPORATION J111 - J113 / SST111 – SST113 FEATURES Low Cost Automated Insertion Package Low Insertion Loss No Offset or Error Voltage Generated By Closed Switch Purely Resistive High Isolation Resistance From Driver Fast Switching Short Sample and Hold Aperture Time • • • • • • APPLICATIONS Analog Switches Choppers Commutators • • • - PIN CONFIGURATION SOT-23 G TO-92 ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Gate-Drain or Gate-Source Voltage . . . .
Calogic  LLC
Calogic LLC
J112 pdf Даташит
7 J112   SINGLE N-CHANNEL JFET

J/SST111 SERIES Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR SILICONIX J/SST111 SERIES LOW GATE LEAKAGE CURRENT FAST SWITCHING ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Junction Operating Temperature Maximum Power Dissipation Continuous Power Dissipation (J) Continuous Power Dissipation (SST) Maximum Currents Gate Current Maximum Voltages Gate to Drain Gate to Source -35V -35V 50mA 360mW 350mW -55 to 150°C -55 to 135°C D S G 1 2 3 TO 92 SINGLE N
Linear Integrated Systems
Linear Integrated Systems
J112 pdf Даташит
6 J112   N-Channel JFETs

J/SST111 Series Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) J/SST111 J/SST112 J/SST113 –3 to –10 –1 to –5 v–3 30 50 100 ID(off) Typ (pA) 5 5 5 tON Typ (ns) 4 4 4 J111 SST111 J112 SST112 J113 SST113 FEATURES D Low On-Resistance: 111 < 30 W D Fast Switching—tON: 4 ns D Low Leakage: 5 pA D Low Capacitance: 3 pF D Low Insertion Loss BENEFITS D Low Error Voltage D High-Speed Analog Circuit Performance D Negligible “Off-Error,” Excellent Accuracy D Good
Vishay
Vishay
J112 pdf Даташит
5 J112   (J111 / J112) JFET Chopper Transistors N-Channel

J111, J112 JFET Chopper Transistors N−Channel — Depletion Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Drain −Gate Voltage Gate −Source Voltage Gate Current Total Device Dissipation @ TA = 25°C Derate above = 25°C Lead Temperature Operating and Storage Junction Temperature Range Symbol VDG VGS IG PD TL TJ, Tstg Value −35 −35 50 350 2.8 300 −65 to +150 Unit Vdc Vdc mAdc mW mW/°C °C °C http://onsemi.com 1 DRAIN 3 GATE 2 SOURCE Maximum ratings are those
ON Semiconductor
ON Semiconductor
J112 pdf Даташит


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свойства компонента (features), его основные параметры (quick reference data), обозначение на принципиальных схемах (symbol), краткое описание (general description).



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