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J110 даташит ( Datasheet PDF )


J110 Datasheet PDF ( Даташиты, Даташиты )

Номер Номер в каталоге Описание Производители PDF
9 J110   N-channel silicon junction FETs

DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon junction FETs FEATURES • High speed switching • Interchangeability of drain and source connections • Low RDSon at zero gate voltage (<8 Ω for J108). APPLICATIONS • Analog switches • Choppers and commutators. DESCRIPTION N-channel symmetrical silicon junc
NXP
NXP
J110 pdf Даташит
8 J110   N-Channel Switch

J108/J109/J110/MMBFJ108 J108/J109/J110/MMBFJ108 N-Channel Switch • This device is designed for digital switching applications where very low on resistance is mandatory. • Sourced from Process 58. 3 1 TO-92 1. Drain 2. Source 3. Gate 2 1 SuperSOT-3 Marking: I8 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * TA=25°C unless otherwise noted Symbol Parameter VDG Drain-Gate Voltage VGS Gate-Source Voltage IGF Forward Gate Current TJ, Tstg Operating and Storage Junction Temperature Range * These rating
Fairchild Semiconductor
Fairchild Semiconductor
J110 pdf Даташит
7 J110   N-Channel JFET Switch

N-Channel JFET Switch CORPORATION J108 – J110 / SST108 – SST110 FEATURES Low Cost Automated Insertion Package Low Insertion Loss No Offset or Error Voltages Generated by Closed Switch Purely Resistive High Isolation Resistance from Driver Fast Switching Low Noise • • • • • • APPLICATIONS Analog Switches Choppers Commutators Low-Noise Audio Amplifiers • • • • PIN CONFIGURATION SOT-23 G TO-92 ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Gate-Drain or Gate-Source Voltage .
Calogic  LLC
Calogic LLC
J110 pdf Даташит
6 J110   N-Channel Silicon Junction Field-Effect Transistor

B-50 01/99 J110, J110A N-Channel Silicon Junction Field-Effect Transistor ¥ Choppers ¥ Commutators ¥ Analog Switches Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating – 25 V 50 mA 360 mW 3.27 mW/°C At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Drain Cutoff Curre
InterFET Corporation
InterFET Corporation
J110 pdf Даташит
5 J110   JFET - General Purpose N-Channel

J110 JFET − General Purpose N−Channel − Depletion N−Channel Junction Field Effect Transistors, depletion mode (Type A) designed for general purpose audio amplifiers, analog switches and choppers. Features http://onsemi.com 1 DRAIN • • • • • • • • N−Channel for Higher Gain Drain and Source Interchangeable High AC Input Impedance High DC Input Resistance Low RDS(on) < 18 W Fast Switching td(on) + tr = 8.0 ns (Typ) Low Noise en = 6.0 nV/√Hz @ 10 Hz (Typ) Pb−Free Package
ON Semiconductor
ON Semiconductor
J110 pdf Даташит
4 J110   Switching

J110 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J110 This n-channel JFET is optimised for low noise high performance switching. The part is particularly suitable for use in low noise audio amplifiers. The TO-92 package is well suited for cost sensitive applications and mass production. (See Packaging Information). FEATURES  DIRECT REPLACEMENT FOR SILICONIX J110  LOW ON RESISTANCE  rDS(on) ≤ 18Ω  FAST SWITCHING  t(on) ≤ 4ns  ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwis
Micross
Micross
J110 pdf Даташит
3 J110   JFET GENERAL-PURPOSE TRANSISTOR

MAXIMUM RATINGS Rating Drain-Gate Voltage Gate-Source Voltage Gate Current Total Device Dissipation (a T/ = 25°C Derate above 25°C Junction Temperature Range Storage Channel Temperature Range Symbol VDG VGS "G PD Tj Tstg Value -25 -25 10 310 2.82 135 -65 to +150 Unit Vdc Vdc mAdc mW mW/°C °C °C J107, J108 J109, J110 CASE 29-02, STYLE 5 TO-92 (TO-226AA) JFET GENERAL-PURPOSE TRANSISTOR —N-CHANNEL DEPLETION ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted Characteristic OFF CHARACTERISTICS Gate-So
Motorola
Motorola
J110 pdf Даташит
2 J110   N-Channel JFETs

J/SST108 Series Vishay Siliconix N–Channel JFETs J108 J109 J110 PRODUCT SUMMARY Part Number J/SST108 J/SST109 J/SST110 VGS(off) (V) –3 to –10 –2 to –6 –0.5 to –4 rDS(on) Max (W) 8 12 18 ID(off) Typ (pA) 20 20 20 tON Typ (ns) 4 4 4 SST108 SST109 SST110 FEATURES D Low On-Resistance: J108 <8 W D Fast Switching—tON: 4 ns D Low Leakage: 20 pA D Low Capacitance: 11 pF D Low Insertion Loss BENEFITS D Low Error Voltage D High-Speed Analog Circuit Performance D Negligible “Off-Error” Excellent Accu
Vishay
Vishay
J110 pdf Даташит


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