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IRGPC40UD2 даташит

Функция этой детали – «Insulated Gate Bipolar Transistor».



Показать результаты поиска

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Номер в каталоге Производители Описание PDF
IRGPC40UD2 IRF
IRF
  INSULATED GATE BIPOLAR TRANSISTOR

Previous Datasheet Index Next Data Sheet PD - 9.808A IRGPC40UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve C UltraFast CoPack IGBT VCES = 600V VCE(sat) ≤ 3.0V G @VGE = 15V, IC = 20A E n-channel Description Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT
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Это результат поиска, начинающийся с "40UD2", "IRGPC40"

Номер в каталоге Производители Описание PDF
G4PH40UD2-E International Rectifier
International Rectifier

IRG4PH40UD2-E

PD - 96781 IRG4PH40UD2-E Features INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C UltraFast CoPack IGBT VCES = 1200V • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast ul
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IRG4PH40UD2 IRF
IRF

Insulated Gate Bipolar Transistor

PD - 94739 IRG4PH40UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and hi
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IRG4PH40UD2-E IRF
IRF

Insulated Gate Bipolar Transistor

PD - 96781 IRG4PH40UD2-E Features INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C UltraFast CoPack IGBT VCES = 1200V • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast ul
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IRG4PH40UD2-EP IRF
IRF

Insulated Gate Bipolar Transistor

PD - 95239 IRG4PH40UD2-EP • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery anti-parallel diode for use in resonant circuits • Industry standard TO-247AD package with extende
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IRG4PH40UD2PBF IRF
IRF

Insulated Gate Bipolar Transistor

PD - 95570 IRG4PH40UD2PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and
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IRGP440UD2 IRF
IRF

INSULATED GATE BIPOLAR TRANSISTOR

PD - 9.1064 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGP440UD2 UltraFast CoPack IGBT Features • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes • Optimized for high operating frequency (over 5kHz) See Fig. 1
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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