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IRGPC40UD2 даташитФункция этой детали – «Insulated Gate Bipolar Transistor». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
IRGPC40UD2 | IRF |
INSULATED GATE BIPOLAR TRANSISTOR Previous Datasheet
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PD - 9.808A
IRGPC40UD2
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve
C
UltraFast CoPack IGBT
VCES = 600V VCE(sat) ≤ 3.0V
G
@VGE = 15V, IC = 20A
E
n-channel
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT |
Это результат поиска, начинающийся с "40UD2", "IRGPC40" |
Номер в каталоге | Производители | Описание | |
G4PH40UD2-E | International Rectifier |
IRG4PH40UD2-E PD - 96781
IRG4PH40UD2-E
Features
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
UltraFast CoPack IGBT
VCES = 1200V
UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast ul |
|
IRG4PH40UD2 | IRF |
Insulated Gate Bipolar Transistor PD - 94739
IRG4PH40UD2
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode New IGBT design provides tighter parameter distribution and hi |
|
IRG4PH40UD2-E | IRF |
Insulated Gate Bipolar Transistor PD - 96781
IRG4PH40UD2-E
Features
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
UltraFast CoPack IGBT
VCES = 1200V
UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast ul |
|
IRG4PH40UD2-EP | IRF |
Insulated Gate Bipolar Transistor PD - 95239
IRG4PH40UD2-EP
UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery anti-parallel diode for use in resonant circuits Industry standard TO-247AD package with extende |
|
IRG4PH40UD2PBF | IRF |
Insulated Gate Bipolar Transistor PD - 95570
IRG4PH40UD2PbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode New IGBT design provides tighter parameter distribution and |
|
IRGP440UD2 | IRF |
INSULATED GATE BIPOLAR TRANSISTOR PD - 9.1064
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGP440UD2
UltraFast CoPack IGBT
Features
• Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes • Optimized for high operating frequency (over 5kHz)
See Fig. 1 |
[1]  
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |