|
IRG4PC50K даташитФункция этой детали – «Insulated Gate Bipolar Transistor». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
IRG4PC50K | International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR PD - 91583B
IRG4PC50K
INSULATED GATE BIPOLAR TRANSISTOR
Short Circuit Rated UltraFast IGBT
C
Features
• High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous generations
VCES = 600V
G E
VCE(on) typ. = 1.84V
@VGE = 15V, IC = 30A
n-channel
Benefits
• As a Freewheeling Diode we recommend our HEX |
|
IRG4PC50KD | IRF |
INSULATED GATE BIPOLAR TRANSISTOR PD -91582B
IRG4PC50KD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
q
C
Short Circuit Rated UltraFast IGBT
VCES = 600V VCE(on) typ. = 1.84V
q q
q q q q
Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz, and Short Circuit Rated to 10µs @125°C, VGE = 15V Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft recovery anti-parallel diodes for use in br |
|
IRG4PC50KDPBF | International Rectifier |
UltraFast IGBT PD- 95235
IRG4PC50KDPbF
• Lead-Free
www.irf.com
1
05/04/04
http://
IRG4PC50KDPbF
2
www.irf.com
http://
IRG4PC50KDPbF
www.irf.com
3
http://
IRG4PC50KDPbF
4
www.irf.com
http://
IRG4PC50KDPbF
www.irf.com
5
http://
IRG4PC50KDPbF
6
www.irf.com
http://
IRG4PC50KDPbF
www.irf.com
7
http://
IRG4PC50KDPbF
8
www.irf.com
http://
IRG4PC50KDPbF
www |
|
IRG4PC50KPBF | International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR PD - 95647
IRG4PC50KPbF
INSULATED GATE BIPOLAR TRANSISTOR
Short Circuit Rated UltraFast IGBT
VCES = 600V
Features
High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V Combines low conduction losses with high switching speed Latest generation design provides tighter parameter distribution and higher efficiency than previous generations Lead-Free
C
G E
VCE(on) typ. = 1.84V
@VGE = 15V, IC = 30A
n-channel
Benefits
As a Freewheeling Diode we recom |
[1]  
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |