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IRG4PC50K даташит

Функция этой детали – «Insulated Gate Bipolar Transistor».



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Номер в каталоге Производители Описание PDF
IRG4PC50K International Rectifier
International Rectifier
  INSULATED GATE BIPOLAR TRANSISTOR

PD - 91583B IRG4PC50K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT C Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous generations VCES = 600V G E VCE(on) typ. = 1.84V @VGE = 15V, IC = 30A n-channel Benefits • As a Freewheeling Diode we recommend our HEX
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IRG4PC50KD IRF
IRF
  INSULATED GATE BIPOLAR TRANSISTOR

PD -91582B IRG4PC50KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features q C Short Circuit Rated UltraFast IGBT VCES = 600V VCE(on) typ. = 1.84V q q q q q q Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz, and Short Circuit Rated to 10µs @125°C, VGE = 15V Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft recovery anti-parallel diodes for use in br
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IRG4PC50KDPBF International Rectifier
International Rectifier
  UltraFast IGBT

PD- 95235 IRG4PC50KDPbF • Lead-Free www.irf.com 1 05/04/04 http:// IRG4PC50KDPbF 2 www.irf.com http:// IRG4PC50KDPbF www.irf.com 3 http:// IRG4PC50KDPbF 4 www.irf.com http:// IRG4PC50KDPbF www.irf.com 5 http:// IRG4PC50KDPbF 6 www.irf.com http:// IRG4PC50KDPbF www.irf.com 7 http:// IRG4PC50KDPbF 8 www.irf.com http:// IRG4PC50KDPbF www
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IRG4PC50KPBF International Rectifier
International Rectifier
  INSULATED GATE BIPOLAR TRANSISTOR

PD - 95647 IRG4PC50KPbF INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT VCES = 600V Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous generations • Lead-Free C G E VCE(on) typ. = 1.84V @VGE = 15V, IC = 30A n-channel Benefits • As a Freewheeling Diode we recom
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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