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IRG4BC20UD даташитФункция этой детали – «Insulated Gate Bipolar Transistor». |
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Номер в каталоге | Производители | Описание | |
IRG4BC20UD | IRF |
INSULATED GATE BIPOLAR TRANSISTOR PD-91449C
IRG4BC20UD
INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft-recovery anti-parallel diodes for use in bridge configurations
• Industry standard TO-220AB package
G
E
N-Channel
VCE |
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IRG4BC20UD-S | IRF |
INSULATED GATE BIPOLAR TRANSISTOR PD- 94077
IRG4BC20UD-S
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard D2Pak package
C
UltraFast CoPack IGBT
VCES = 600V
G E
VCE(o |
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IRG4BC20UD-SPBF | International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR PD- 95565A
IRG4BC20UD-SPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
UltraFast CoPack IGBT
Features
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
• Industry standard D2Pak package • Lead-Free
C
G E |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |