IRFZ44N даташит

Функция этой детали – «Trans Mosfet N-ch 55v 49a 3-pin(3+tab) To-220ab».

IRFZ44N is a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) used in electronic circuits for switching and amplification applications. It is an N-channel MOSFET with a voltage rating of 55V and a current rating of 49A.

Features:

1. It has a low on-resistance, which means it can handle high power and reduce power loss.

2. Its TO-220AB package provides good thermal dissipation and makes it easy to mount on a heatsink.

3. It is suitable for use in a wide range of electronic circuits, making it a versatile component in electronics design.

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Номер в каталоге	Производители	Описание	PDF
IRFZ44N	NXP Semiconductors	49A, 55V, N-channel Enhancement Mode TrenchMOS Transistor Philips Semiconductors Product specification N-channel enhancement mode TrenchMOSTM transistor GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode power supplies and general purpose switching applications. IRFZ44N QUICK REFERENCE DATA SYMBOL VDS ID Ptot T
IRFZ44N	New Jersey Semiconductor	Trans MOSFET N-CH 55V 49A 3-Pin(3+Tab) TO-220AB
IRFZ44N	Matsu	N-CHANNEL Power MOSFET APPLICATION Buck Converter High Side Switch DC motor control , Ups ...etc , & other Application VDSS 55V RDS(ON) Max. 17.5mȍ PIN CONFIGURATION TO-220 Front View ID 50A IRFZ44N N-CHANNEL Power MOSFET FEATURES Ultra Low ON Resistance Low Gate Charge Dynamic dv/dt Rating Inductive Switching Curves Peak Current vs Pulse Width Curve SYMBOL D GATE DRAIN SOURCE G S 12 3 ʳ ABSOLUTE MAXIMUM RATINGS N-Channel MOSFET Rating Drain to Source Voltage Drain to Current Ё Continuous Tc = 25к, VGS@10
IRFZ44N	International Rectifier	55V, 49A, HEXFET Power MOSFET PD - 94053 IRFZ44N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 17.5mΩ G S ID = 49A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are
IRFZ44N	INCHANGE	N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25℃ ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.032Ω(Max) ·Fast Switching DESCRIPTION ·Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offe
IRFZ44NL	International Rectifier	(IRFZ44NL / IRFZ44NS) Power MOSFET PD - 94153 Advanced Process Technology Surface Mount (IRFZ44NS) l Low-profile through-hole (IRFZ44NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l l IRFZ44NS IRFZ44NL HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.0175Ω Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power M
IRFZ44NLPBF	International Rectifier	Power MOSFET ( Transistor ) l Advanced Process Technology l Surface Mount (IRFZ44NS) l Low-profile through-hole (IRFZ44NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient
IRFZ44NPBF	International Rectifier	Power MOSFET ( Transistor ) PD - 94787 IRFZ44NPbF Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable devic

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Последние обновления

Номер в каталоге	Производители	Описание	PDF
2N3904	Unisonic Technologies	Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.
NE555	ST Microelectronics	Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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