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IRFP360 даташитФункция этой детали – «N-channel Enhancement Mode Fet». |
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Номер в каталоге | Производители | Описание | |
IRFP360 | Vishay |
Power MOSFET ( Transistor ) Power MOSFET
IRFP360, SiHFP360
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
400 VGS = 10 V
210 30 110 Single
0.20
TO-247
D
S
D G
G
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
FEATURES • Dynamic dV/dt Rated • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation P |
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IRFP360 | New Jersey Semiconductor |
Trans MOSFET N-CH 400V 23A 3-Pin(3+Tab) TO-247AC |
|
IRFP360 | IXYS |
N-Channel Enhancement Mode FET MegaMOSTMFET
N-Channel Enhancement Mode
IRFP 360
VDSS = 400 V
ID25 = 23 A RDS(on) = 0.20 Ω
Preliminary data
Symbol
VDSS V
DGR
VGS VGSM
ID25 ID100 IDM IAR
EAR
dv/dt
PD
TJ TJM Tstg
Md
Weight
Test Conditions
TJ = 25°C to 150°C
T J
=
25°C
to
150°C;
R GS
=
1.0
MΩ
Continuous Transient
TC = 25°C TC = 100°C TC = 25°C, pulse width limited by TJM
TC = 25°C
IS ≤ IDM, di/dt
T J
≤
150°C,
R G
=
2
Ω
TC = 25°C
Mounting torque
Max lead temperature for soldering 1.6 mm (0.062 in.) from cas |
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IRFP360 | Intersil Corporation |
N-Channel Power MOSFET / Transistor
IRFP360
Data Sheet July 1999 File Number
2290.3
23A, 400V, 0.200 Ohm, N-Channel Power MOSFET
This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring hig |
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IRFP360 | International Rectifier |
Power MOSFET ( Transistor )
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IRFP360 | Inchange Semiconductor |
N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP360
FEATURES ·Drain Current –ID= 23A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 400V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.2Ω(Max) ·Fast Switching
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
400 ±20
V V
ID Drain Current-Continuous
|
|
IRFP360LC | New Jersey Semiconductor |
Trans MOSFET N-CH 400V 23A 3-Pin(3+Tab) TO-247AC |
|
IRFP360LC | International Rectifier |
Power MOSFET ( Transistor )
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PD - 9.1230
IRFP360LC
HEXFET ® Power MOSFET
Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated Description
This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements |
[1]  [2]
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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