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IRFP360 даташит

Функция этой детали – «N-channel Enhancement Mode Fet».



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Номер в каталоге Производители Описание PDF
IRFP360 Vishay
Vishay
  Power MOSFET ( Transistor )

Power MOSFET IRFP360, SiHFP360 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 400 VGS = 10 V 210 30 110 Single 0.20 TO-247 D S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Dynamic dV/dt Rated • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION Third generation P
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IRFP360 New Jersey Semiconductor
New Jersey Semiconductor
  Trans MOSFET N-CH 400V 23A 3-Pin(3+Tab) TO-247AC

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IRFP360 IXYS
IXYS
  N-Channel Enhancement Mode FET

MegaMOSTMFET N-Channel Enhancement Mode IRFP 360 VDSS = 400 V ID25 = 23 A RDS(on) = 0.20 Ω Preliminary data Symbol VDSS V DGR VGS VGSM ID25 ID100 IDM IAR EAR dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1.0 MΩ Continuous Transient TC = 25°C TC = 100°C TC = 25°C, pulse width limited by TJM TC = 25°C IS ≤ IDM, di/dt T J ≤ 150°C, R G = 2 Ω TC = 25°C Mounting torque Max lead temperature for soldering 1.6 mm (0.062 in.) from cas
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IRFP360 Intersil Corporation
Intersil Corporation
  N-Channel Power MOSFET / Transistor

IRFP360 Data Sheet July 1999 File Number 2290.3 23A, 400V, 0.200 Ohm, N-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring hig
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IRFP360 International Rectifier
International Rectifier
  Power MOSFET ( Transistor )

DataSheet 4 U .com www.DataSheet4U 4U.com DataSheet 4 U .com www.DataSheet4U 4U.com DataSheet 4 U .com www.DataSheet4U 4U.com DataSheet 4 U .com www.DataSheet4U 4U.com DataSheet 4 U .com www.DataSheet4U 4U.
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IRFP360 Inchange Semiconductor
Inchange Semiconductor
  N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP360 FEATURES ·Drain Current –ID= 23A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 400 ±20 V V ID Drain Current-Continuous
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IRFP360LC New Jersey Semiconductor
New Jersey Semiconductor
  Trans MOSFET N-CH 400V 23A 3-Pin(3+Tab) TO-247AC

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IRFP360LC International Rectifier
International Rectifier
  Power MOSFET ( Transistor )

Previous Datasheet Index Next Data Sheet PD - 9.1230 IRFP360LC HEXFET ® Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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