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IRFBC40 даташитФункция этой детали – «6.2a/ 600v/ 1.200 Ohm/ N-channel Power Mosfet». |
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Номер в каталоге | Производители | Описание | |
IRFBC40 | Vishay |
Power MOSFET ( Transistor ) IRFBC40, SiHFBC40
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 60 8.3 30 Single
D
FEATURES
600 1.2
• Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device desi |
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IRFBC40 | STMicroelectronics |
N - CHANNEL 600V - 1.0ohm - 6.2 A - TO-220 PowerMESH] MOSFET ®
IRFBC40
N - CHANNEL 600V - 1.0 Ω - 6.2 A - TO-220 PowerMESH™ MOSFET
TYPE IRFBC40
s s s s s
V DSS 600 V
R DS(on) < 1.2 Ω
ID 6.2 A
TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
2 3
DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. APPLICATIONS s H |
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IRFBC40 | Intersil Corporation |
6.2A/ 600V/ 1.200 Ohm/ N-Channel Power MOSFET IRFBC40
Data Sheet July 1999 File Number
2157.3
6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring |
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IRFBC40 | International Rectifier |
Power MOSFET(Vdss=600V/ Rds(on)max=1.2ohm/ Id=6.2A) |
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IRFBC40 | Harris Corporation |
6.2A and 5.4A/ 600V/ 1.2 and 1.6 Ohm/ N-Channel Power MOSFETs Semiconductor
IRFBC40, IRFBC42
6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching |
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IRFBC40 | Harris |
N-Channel Power MOSFETs |
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IRFBC40 | Fairchild Semiconductor |
N-Channel Power MOSFET / Transistor IRFBC40
Data Sheet January 2002
6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and |
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IRFBC40A | International Rectifier |
Power MOSFET(Vdss=600V/ Rds(on)max=1.2ohm/ Id=6.2A) PD -91885A
SMPS MOSFET
IRFBC40A
HEXFET® Power MOSFET
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss Specified ( See AN 1001)
VDSS
600V
Rds(on) max
1.2Ω
ID
6.2A
TO-220AB
G DS
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C ID |
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |