IRF840 даташит

Функция этой детали – «N-channel Mosfet Transistor».

It is an N-channel MOSFET, which means that it is controlled by a voltage applied to the gate terminal and can switch high current loads on and off.

It has a maximum drain-source voltage rating of 500 volts and a maximum continuous drain current rating of 8 amps.

It has a low on-resistance, which allows for efficient power transfer and low power dissipation.

Advantages of the IRF840

1. High voltage and current ratings
2. Low on-resistance
3. Suitable for high-power switching applications
4. TO-220 package is a common form factor for high-power transistors

Disadvantages:

1. Relatively slow switching speeds
2. Can introduce noise into the system
3. Proper heatsinking and thermal management are necessary to prevent damage due to excessive heat buildup

Показать результаты поиска

Номер в каталоге	Производители	Описание	PDF
IRF840	Vishay	8A, 500V, Power MOSFET Power MOSFET IRF840, SiHF840 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 63 9.3 32 Single 0.85 D TO-220AB G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from V
IRF840	TRANSYS	Power MOSFET ( Transistor ) IRF840 Power MOSFET VDSS = 500V, RDS(on) = 0.85 ohm, ID = 8.0 A D G N Channel S Symbol ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unless stated Otherwise Parameter Symbol Test Conditions Drain to Source Breakdown Voltage Drain to Source Leakage Current Gate to Source Leakage Current Gate Threshold Voltage V(BR)DSS VGS = 0 VDC, ID = 250µA IDSS VDS = 500VDC, VGS = 0VDC VDS = 400VDC, VGS = 0VDC Tj=125 C IGSS VGS(th) VGS = +20VDC VGS = -20VDC VDS = VGS, ID = 250µA Static Drain to Source On - Resistance
IRF840	STMicroelectronics	N - CHANNEL 500V - 0.75ohm - 8A - TO-220 PowerMESH] MOSFET ® IRF840 N - CHANNEL 500V - 0.75Ω - 8A - TO-220 PowerMESH™ MOSFET TYPE IRF840 s s s s s V DSS 500 V R DS(on) < 0.85 Ω ID 8 A TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 2 3 DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. APPLICATIONS s HIGH C
IRF840	Samsung semiconductor	500V, 8A, N-CHANNEL POWER MOSFET
IRF840	NXP Semiconductors	8A, 500V, N-Channel MOSFET, Transistor Philips Semiconductors Product specification PowerMOS transistor Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • High thermal cycling performance • Low thermal resistance g IRF840 SYMBOL d QUICK REFERENCE DATA VDSS = 500 V ID = 8.5 A RDS(ON) ≤ 0.85 Ω s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control cir
IRF840	New Jersey Semiconductor	Trans MOSFET N-CH 500V 8A 3-Pin(3+Tab) TO-220AB
IRF840	nELL	N-Channel Power MOSFET / Transistor SEMICONDUCTOR IRF840 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (8A, 500Volts) DESCRIPTION The Nell IRF840 are N-Channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are designed as an extremely efficient and reliable device for use in a wide variety of applications such as switching regulators. convertors, UPS, switching mode power supplies and dri
IRF840	Motorola Inc	500V, 8A, N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

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Последние обновления

Номер в каталоге	Производители	Описание	PDF
2N3904	Unisonic Technologies	Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.
NE555	ST Microelectronics	Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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