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IRF7413 даташитФункция этой детали – «Power Mosfet(vdss=30v/ Id=12a)». |
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Номер в каталоге | Производители | Описание | |
IRF7413 | International Rectifier |
Power MOSFET(Vdss=30V/ Id=12A) PD- 91330F
SMPS MOSFET
Applications l High frequency DC-DC converters
IRF7413
HEXFET® Power MOSFET RDS(on) max(mW)
11@VGS = 10V
VDSS
30V
ID
12A
Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
S S S G
1
8
A A D D D D
2
7
3
6
4
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt |
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IRF7413A | International Rectifier |
Power MOSFET(Vdss=30V/ Rds(on)=0.0135ohm) PD - 9.1613A
PRELIMINARY Generation V Technology l Ultra Low On-Resistance l N-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description
l
A A D D D D
IRF7413A
HEXFET® Power MOSFET
1 2 8 7
S S S G
VDSS = 30V RDS(on) = 0.0135Ω
3
6
4
5
T op V iew
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedize |
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IRF7413PBF | International Rectifier |
HEXFET Power MOSFET
PD - 95017A
IRF7413PbF
l l l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching 100% RG Tested Lead-Free
HEXFET® Power MOSFET
S S S G
1 8
A A D D D D
2
7
VDSS = 30V RDS(on) = 0.011Ω
3
6
4
5
Top View
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with |
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IRF7413PBF-1 | International Rectifier |
Power MOSFET ( Transistor ) VDS RDS(on) max
(@VGS = 10V)
Qg (typical) ID
(@TA = 25°C)
30 0.011
52 13
V Ω nC A
IRF7413PbF-1
S1
HEXFET® Power MOSFET
AA 8D
S2
7D
S3
6D
G4
5D
Top View
SO-8
Features Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification
Benefits ⇒ Multi-Vendor Compatibility
Easier Manufacturing Environmentally Friendlier Increased Reliability
Base Part Number IRF7413PbF-1
Package Type SO-8
Standard Pack Form Tube/Bulk
Tap |
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IRF7413Z | International Rectifier |
HEXFET Power MOSFET PD - 94646
IRF7413Z
HEXFET® Power MOSFET
Applications l Control FET for Notebook Processor Power l Control and Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Computing, Networking and Telecommunication Systems Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current
VDSS
30V
RDS(on) max
10m:@VGS = 10V
ID
13A
S S S G
1
8
A A D D D D
2
7
3
6
4
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 2 |
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IRF7413ZPBF | International Rectifier |
Control FET PD - 95335B
IRF7413ZPbF
HEXFET® Power MOSFET
Applications l Control FET for Notebook Processor Power l Control and Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Computing, Networking and Telecommunication Systems Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l Lead-Free
VDSS
30V
RDS(on) max
10m:@VGS = 10V
A A D D D D
ID
13A
S S S G
1 2 3 4
8 7
6 5
Top View
SO-8
Absolute Maximum Ratin |
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IRF7413ZUPBF | International Rectifier |
HEXFT Power MOSFET PD - 96069A
IRF7413ZUPbF
HEXFET® Power MOSFET
Applications l Control FET for Notebook Processor Power l Control and Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Computing, Networking and Telecommunication Systems Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l Lead-Free
VDSS
30V
RDS(on) max
10m @VGS = 10V
A A D D D D
:
ID
13A
S S S G
1 2 3 4
8 7
6 5
Top View
SO-8
Absolute Maximum R |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |