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IRF7413 даташит

Функция этой детали – «Power Mosfet(vdss=30v/ Id=12a)».



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IRF7413 International Rectifier
International Rectifier
  Power MOSFET(Vdss=30V/ Id=12A)

PD- 91330F SMPS MOSFET Applications l High frequency DC-DC converters IRF7413 HEXFET® Power MOSFET RDS(on) max(mW) 11@VGS = 10V VDSS 30V ID 12A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current S S S G 1 8 A A D D D D 2 7 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt
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IRF7413A International Rectifier
International Rectifier
  Power MOSFET(Vdss=30V/ Rds(on)=0.0135ohm)

PD - 9.1613A PRELIMINARY Generation V Technology l Ultra Low On-Resistance l N-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l A A D D D D IRF7413A HEXFET® Power MOSFET 1 2 8 7 S S S G VDSS = 30V RDS(on) = 0.0135Ω 3 6 4 5 T op V iew Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedize
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IRF7413PBF International Rectifier
International Rectifier
  HEXFET Power MOSFET

PD - 95017A IRF7413PbF l l l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching 100% RG Tested Lead-Free HEXFET® Power MOSFET S S S G 1 8 A A D D D D 2 7 VDSS = 30V RDS(on) = 0.011Ω 3 6 4 5 Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with
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IRF7413PBF-1 International Rectifier
International Rectifier
  Power MOSFET ( Transistor )

VDS RDS(on) max (@VGS = 10V) Qg (typical) ID (@TA = 25°C) 30 0.011 52 13 V Ω nC A IRF7413PbF-1 S1 HEXFET® Power MOSFET AA 8D S2 7D S3 6D G4 5D Top View SO-8 Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Benefits ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base Part Number IRF7413PbF-1 Package Type SO-8 Standard Pack Form Tube/Bulk Tap
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IRF7413Z International Rectifier
International Rectifier
  HEXFET Power MOSFET

PD - 94646 IRF7413Z HEXFET® Power MOSFET Applications l Control FET for Notebook Processor Power l Control and Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Computing, Networking and Telecommunication Systems Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current VDSS 30V RDS(on) max 10m:@VGS = 10V ID 13A S S S G 1 8 A A D D D D 2 7 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 2
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IRF7413ZPBF International Rectifier
International Rectifier
  Control FET

PD - 95335B IRF7413ZPbF HEXFET® Power MOSFET Applications l Control FET for Notebook Processor Power l Control and Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Computing, Networking and Telecommunication Systems Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l Lead-Free VDSS 30V RDS(on) max 10m:@VGS = 10V A A D D D D ID 13A S S S G 1 2 3 4 8 7 6 5 Top View SO-8 Absolute Maximum Ratin
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IRF7413ZUPBF International Rectifier
International Rectifier
  HEXFT Power MOSFET

PD - 96069A IRF7413ZUPbF HEXFET® Power MOSFET Applications l Control FET for Notebook Processor Power l Control and Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Computing, Networking and Telecommunication Systems Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l Lead-Free VDSS 30V RDS(on) max 10m @VGS = 10V A A D D D D : ID 13A S S S G 1 2 3 4 8 7 6 5 Top View SO-8 Absolute Maximum R
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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