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Datasheet IRF540S Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | IRF540S | N-channel TrenchMOS transistor Philips Semiconductors
Product specification
N-channel TrenchMOS™ transistor
IRF540, IRF540S
FEATURES
• ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance
SYMBOL
d
QUICK REFERENCE DATA VDSS = 100 V ID = 23 A
g
RDS(ON) ≤ 77 mΩ
s
GENERAL D |
NXP Semiconductors |
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2 | IRF540S | Power MOSFET ( Transistor ) www.DataSheet.co.kr
IRF540S, SiHF540S
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 10 V 72 11 32 Single 0.077
FEATURES
D
• Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tap |
Vishay Siliconix |
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1 | IRF540S | Trans MOSFET N-CH 100V 23A 3-Pin(2+Tab) D2PAK |
New Jersey Semiconductor |
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SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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