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Datasheet IRF540N Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 8 | IRF540N | Power MOSFET ( Transistor ) Data Sheet
January 2002
IRF540N
33A, 100V, 0.040 Ohm, N-Channel, Power MOSFET
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE
Symbol
DRAIN (FLANGE)
IRF540N
D
G S
Features
• Ultra Low On-Resistance - rDS(ON) = 0.040Ω, VGS = 10V
• Simulation Models - Temperature Compensated PSPICE™ and SAB |
 Fairchild Semiconductor |
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| 7 | IRF540N | 33A/ 100V/ 0.040 Ohm/ N-Channel Power MOSFET IRF540N
TM
Data Sheet
March 2000
File Number
4842
33A, 100V, 0.040 Ohm, N-Channel Power MOSFET Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE
Features
• Ultra Low On-Resistance - rDS(ON) = 0.040Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE™ and SABER© Electrical Models |
 Intersil Corporation |
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| 6 | IRF540N | HEXFET Power MOSFET(Vdss=100V, Id=33A) PD - 91341B
IRF540N
HEXFET® Power MOSFET
l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 100V RDS(on) = 44mΩ
G S
ID = 33A
Description
Advanced HEXFET® Power MOSFETs from Interna |
 International Rectifier |
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| 5 | IRF540N | Trans MOSFET N-CH 100V 33A 3-Pin(3+Tab) TO-220AB |
 New Jersey Semiconductor |
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