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IRF530N даташитФункция этой детали – «Power Mosfet(vdss=100v/ Rds(on)=90mohm/ Id=17a)». |
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Номер в каталоге | Производители | Описание | |
IRF530N | NXP Semiconductors |
N-channel TrenchMOS transistor Philips Semiconductors
Product specification
N-channel TrenchMOS™ transistor
IRF530N
FEATURES
• ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance
SYMBOL
d
QUICK REFERENCE DATA VDSS = 100 V ID = 17 A
g
RDS(ON) ≤ 110 mΩ
s
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:• d.c. to d.c. converters • switched mode power supplies The IRF530N is supplied in the SOT78 |
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IRF530N | New Jersey Semiconductor |
Trans MOSFET N-CH 100V 17A 3-Pin(3+Tab) TO-220AB |
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IRF530N | Intersil Corporation |
22A/ 100V/ 0.064 Ohm/ N-Channel Power MOSFET IRF530N
TM
Data Sheet
March 2000
File Number
4843
22A, 100V, 0.064 Ohm, N-Channel Power MOSFET Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE
Features
• Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE™ and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.intersil.com • Peak Current vs Pulse Width Curve • UIS Rating Curve
DRAIN (FLANGE)
Symbol
D
Ordering Information
PART NUMBER IRF530N
G
PACKAGE TO-220AB
BRAND IRF530 |
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IRF530N | International Rectifier |
Power MOSFET(Vdss=100V/ Rds(on)=90mohm/ Id=17A) PD - 91351
IRF530N
HEXFET® Power MOSFET
l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 100V RDS(on) = 90mΩ
G S
ID = 17A
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are w |
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IRF530N | Fairchild Semiconductor |
Power MOSFET ( Transistor ) Data Sheet
January 2002
IRF530N
22A, 100V, 0.064 Ohm, N-Channel, Power MOSFET
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE
Symbol
DRAIN (FLANGE)
IRF530N
D
G S
Features
• Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V
• Simulation Models - Temperature Compensated PSPICE™ and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information
PART NUMBER
PACKAGE
IRF530N
TO-220AB
BRAND IRF5 |
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IRF530NL | International Rectifier |
HEXFET Power MOSFET PD - 91352B
HEXFET Power MOSFET
l l l l l l
IRF530NS IRF530NL ®
VDSS = 100V RDS(on) = 90mΩ
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
D
G S
ID = 17A
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MO |
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IRF530NLPBF | International Rectifier |
HEXFET Power MOSFET PD - 95100
HEXFET Power MOSFET
Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description
l
IRF530NSPbF IRF530NLPbF ®
VDSS = 100V RDS(on) = 90mΩ
D
G S
ID = 17A
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that |
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IRF530NPbF | International Rectifier |
HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free
G
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliabl |
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Последние обновления
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2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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