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IPW90R1K2C3 даташитФункция этой детали – «Coolmos Power Transistor». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
IPW90R1K2C3 | Infineon Technologies AG |
CoolMOS Power Transistor IPW90R1K2C3
CoolMOS™ Power Transistor
Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge
Product Summary V DS @ T J=25°C R DS(on),max @T J=25°C Q g,typ 900 1.2 28 V Ω nC
PG-TO247
CoolMOS™ 900V is designed for: • Quasi Resonant Flyback / Forward topologies • PC Silverbox and consumer applications • Industrial SMPS
Type IPW90R1K |
Это результат поиска, начинающийся с "90R1K2C3", "IPW90R1K" |
Номер в каталоге | Производители | Описание | |
IPA90R1K2C3 | Infineon Technologies |
CoolMOS Power Transistor IPA90R1K2C3
CoolMOS™ Power Transistor
Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge
Product S |
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IPD90R1K2C3 | Infineon Technologies |
Power Transistor IPD90R1K2C3
CoolMOS™ Power Transistor
Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability
Product Summary V DS @ T J=25°C R DS(on),max @T J=25°C Q g,typ
900 V 1.2 Ω 28 nC
• Qualified according to JEDEC1) for target app |
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IPI90R1K2C3 | Infineon Technologies |
Power-Transistor CoolMOS™ Power Transistor
Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge
CoolMOS™ 900V is desig |
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IPP90R1K2C3 | Infineon Technologies |
Power Transistor CoolMOS™ Power Transistor
Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge
CoolMOS™ 900V is desig |
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IPW90R1K0C3 | Infineon Technologies |
Power-Transistor CoolMOS™ Power Transistor
Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge
IPW90R1K0C3
Product Su |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |