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Datasheet IKA08N65H5 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | IKA08N65H5 | IGBT, Insulated Gate Bipolar Transistor IGBT
Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1 fastandsoftantiparalleldiode
IKA08N65H5
650VDuoPackIGBTandDiode Highspeedswitchingseriesfifthgeneration
Datasheet
IndustrialPowerControl
IKA08N65H5
Highspeedswitchingseriesfifthgeneration
Highspeed5IG |  Infineon | igbt |
IKA Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | IKA03N120H2 | IGBT, Insulated Gate Bipolar Transistor IKA03N120H2
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
• • Designed for: - TV – Horizontal Line Deflection 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switch Infineon igbt | | |
| 2 | IKA06N60T | IGBT, Insulated Gate Bipolar Transistor IKA06N60T
^ TrenchStop series
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
C
• • • •
•
• • •
Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs G Designed f Infineon igbt | | |
| 3 | IKA08N65F5 | IGBT, Insulated Gate Bipolar Transistor IGBT
Highspeed5FASTIGBTinTRENCHSTOPTM5technologycopackedwithRAPID1 fastandsoftantiparalleldiode
IKA08N65F5
650VDuoPackIGBTandDiode Highspeedswitchingseriesfifthgeneration
Datasheet
IndustrialPowerControl
IKA08N65F5
Highspeedswitchingseriesfifthgeneration
Highspeed Infineon igbt | | |
| 4 | IKA08N65H5 | IGBT, Insulated Gate Bipolar Transistor IGBT
Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1 fastandsoftantiparalleldiode
IKA08N65H5
650VDuoPackIGBTandDiode Highspeedswitchingseriesfifthgeneration
Datasheet
IndustrialPowerControl
IKA08N65H5
Highspeedswitchingseriesfifthgeneration
Highspeed5IG Infineon igbt | | |
| 5 | IKA10N60T | IGBT, Insulated Gate Bipolar Transistor IKA10N60T
TrenchStop Series
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
C
• • • •
•
• • • • •
Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time – 5µs G Desig Infineon igbt | | |
| 6 | IKA15N60T | IGBT, Insulated Gate Bipolar Transistor IKA15N60T
TRENCHSTOP™ Series
q
Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Features:
Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s TRE Infineon igbt | | |
| 7 | IKA15N65F5 | IGBT, Insulated Gate Bipolar Transistor IGBT
Highspeed5FASTIGBTinTRENCHSTOPTM5technologycopackedwithRAPID1 fastandsoftantiparalleldiode
IKA15N65F5
650VDuoPackIGBTandDiode Highspeedswitchingseriesfifthgeneration
Datasheet
IndustrialPowerControl
IKA15N65F5
Highspeedswitchingseriesfifthgeneration
Highspeed Infineon igbt | |
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