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HMP31GP7AFR4C-Y5 даташитФункция этой детали – «240pin Registered Ddr2 Sdram Dimms Based On 2gb». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
HMP31GP7AFR4C-Y5 | Hynix |
240pin Registered DDR2 SDRAM DIMMs based on 2Gb 240pin Registered DDR2 SDRAM DIMMs based on 2Gb version A
This Hynix Registered Dual In-Line Memory Module (DIMM) series consists of 2Gb version A DDR2 SDRAMs in Fine Ball Grid Array (FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 2Gb version A based Registered DDR2 DIMM series provide a high performance 8 byte interface in 5.25" width form factor of industry standard. It is suitable for easy interchange and addition.
FEATURES
• JEDEC standard Double Data Rate2 Synchronous DRAMs (DDR2 SDRAMs) with 1.8V |
Это результат поиска, начинающийся с "31GP7AFR4C", "HMP31GP7AFR4C" |
Номер в каталоге | Производители | Описание | |
HMP31GP7AFR4C-S5 | Hynix |
240pin Registered DDR2 SDRAM DIMMs based on 2Gb 240pin Registered DDR2 SDRAM DIMMs based on 2Gb version A
This Hynix Registered Dual In-Line Memory Module (DIMM) series consists of 2Gb version A DDR2 SDRAMs in Fine Ball Grid Array (FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 2Gb version A based Registered DDR2 |
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HMP31GP7AFR4C-S6 | Hynix |
240pin Registered DDR2 SDRAM DIMMs based on 2Gb 240pin Registered DDR2 SDRAM DIMMs based on 2Gb version A
This Hynix Registered Dual In-Line Memory Module (DIMM) series consists of 2Gb version A DDR2 SDRAMs in Fine Ball Grid Array (FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 2Gb version A based Registered DDR2 |
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1N3174 | Microsemi Corporation |
(1N3161 - 1N3177) SILICON POWER RECTIFIER |
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1N3174 | New Jersey Semiconductor |
Diode Switching 1KV 300A 2-Pin DO-9 |
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2N3174 | Inchange Semiconductor |
Silicon PNP Power Transistor isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2N3174
DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage-
: VCE(sat)= -0.75V(Max)@ IC = -1A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliabl |
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2N3174 | Seme LAB |
Bipolar PNP Device 2N3174
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)
6.35 (0.25) 9.15 (0.36)
1.52 (0.06) 3.43 (0.135)
Bipolar PNP Device in a Hermetically sealed TO3
Metal Package.
38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675 |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |