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H27UCG8T2BTR-BC даташит

Функция этой детали – «F20 64gb Mlc Nand Flash Memory».



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Номер в каталоге Производители Описание PDF
H27UCG8T2BTR-BC Hynix
Hynix
  F20 64Gb MLC NAND Flash Memory

H27UCG8T2BTR-BC 64Gb(8192M x 8bit) MLC NAND Flash F20 64Gb MLC NAND Flash Memory Legacy TSOP This document is a general product description and is subject to change without notice. SK hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 0.1 / Oct. 2012 1 Free Datasheet http:/// H27UCG8T2BTR-BC 64Gb(8192M x 8bit) MLC NAND Flash Document Title 64Gbit(8192M x 8bit) NAND Flash Memory Revision History Revision No. 0.0 0.1 Initial Draft Correct errat
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Это результат поиска, начинающийся с "27UCG8T2BTR", "H27UCG8T2BTR"

Номер в каталоге Производители Описание PDF
2SC2782 Toshiba Semiconductor
Toshiba Semiconductor

Silicon NPN Epitaxial Planar Type Transistor

TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS Output Power : Po = 80W (Min.) (f = 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter
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2SC2782 ASI
ASI

NPN SILICON RF POWER TRANSISTOR

2SC2782 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC2782 is a12.5 V epitaxial silicon NPN transistor. Designed primarily for VHF power amplifer application up to175 MHz band. PACKAGE STYLE .500 6L FLG C A 3 D 1 2x Ø N FULL R FEATURES: • 175 MHz 12.5 V • PG
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2SC2782 HGSemi
HGSemi

Silicon NPN POWER TRANSISTOR

HG Semiconductors 2sc2782HG RF POWER TRANSISTOR ROHS Compliance,Silicon NPN POWER TRANSISTOR 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS Output Power : Po = 80W (Min.) (f = 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage C
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2SC2782A Toshiba Semiconductor
Toshiba Semiconductor

VHF BAND POWER AMPLIFIER APPLICATIONS

2SC2782A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782A Unit in mm : Po = 80W (Min.) (f = 175MHz, VCC = 12.5V, Pi = 18W) VHF BAND POWER AMPLIFIER APPLICATIONS z Output Power ABSOLUTE MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base
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2SK2782 Toshiba Semiconductor
Toshiba Semiconductor

N CHANNEL MOS TYPE (HIGH SPEED/ HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR/ DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

Datasheet.es 2SK2782 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L −π−MOSV) 2 2SK2782 5.2 ± 0.2 1.7 ± 0.2 Chopper Regulator, DC-DC Converter and Motor Drive Applications z 4-V gate drive z Low drain−source ON-resistance z High forward transfer a
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AAT2782 Advanced Analogic Technologies
Advanced Analogic Technologies

Triple Output PMIC

PRODUCT DATASHEET AAT2782 SystemPowerTM Triple Output PMIC: Dual Buck with Low-VIN LDO General Description Features The AAT2782 provides three independently regulated DC outputs: two step-down (Buck) regulators and a single low input voltage, low drop-out (LDO) regulator. Th
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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