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H27UCG8T2BTR-BC даташитФункция этой детали – «F20 64gb Mlc Nand Flash Memory». |
Показать результаты поиска |
| Номер в каталоге | Производители | Описание | |
| H27UCG8T2BTR-BC |  Hynix |
F20 64Gb MLC NAND Flash Memory H27UCG8T2BTR-BC 64Gb(8192M x 8bit) MLC NAND Flash
F20 64Gb MLC NAND Flash Memory Legacy TSOP
This document is a general product description and is subject to change without notice. SK hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 0.1 / Oct. 2012 1
Free Datasheet http:///
H27UCG8T2BTR-BC 64Gb(8192M x 8bit) MLC NAND Flash Document Title 64Gbit(8192M x 8bit) NAND Flash Memory Revision History
Revision No. 0.0 0.1 Initial Draft Correct errat |
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Это результат поиска, начинающийся с "27UCG8T2BTR", "H27UCG8T2BTR" |
| Номер в каталоге | Производители | Описание | |
| 2SC2782 |  Toshiba Semiconductor |
Silicon NPN Epitaxial Planar Type Transistor TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
2SC2782
2SC2782
VHF BAND POWER AMPLIFIER APPLICATIONS
Output Power
: Po = 80W (Min.) (f = 175MHz, VCC = 12.5V, Pi = 18W)
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter |
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| 2SC2782 |  ASI |
NPN SILICON RF POWER TRANSISTOR 2SC2782
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2SC2782 is a12.5 V epitaxial silicon NPN transistor. Designed primarily for VHF power amplifer application up to175 MHz band.
PACKAGE STYLE .500 6L FLG
C A
3
D
1
2x Ø N FULL R
FEATURES:
• 175 MHz 12.5 V • PG |
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| 2SC2782 |  HGSemi |
Silicon NPN POWER TRANSISTOR HG Semiconductors
2sc2782HG RF POWER TRANSISTOR
ROHS Compliance,Silicon NPN POWER TRANSISTOR
2SC2782
VHF BAND POWER AMPLIFIER APPLICATIONS
Output Power
: Po = 80W (Min.) (f = 175MHz, VCC = 12.5V, Pi = 18W)
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
Collector-Base Voltage C |
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| 2SC2782A | Toshiba Semiconductor |
VHF BAND POWER AMPLIFIER APPLICATIONS 2SC2782A
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
2SC2782A
Unit in mm : Po = 80W (Min.) (f = 175MHz, VCC = 12.5V, Pi = 18W)
VHF BAND POWER AMPLIFIER APPLICATIONS
z Output Power
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC Collector-Base |
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| 2SK2782 | Toshiba Semiconductor |
N CHANNEL MOS TYPE (HIGH SPEED/ HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR/ DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) Datasheet.es
2SK2782
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L −π−MOSV)
2
2SK2782
5.2 ± 0.2 1.7 ± 0.2
Chopper Regulator, DC-DC Converter and Motor Drive Applications
z 4-V gate drive z Low drain−source ON-resistance z High forward transfer a |
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| AAT2782 |  Advanced Analogic Technologies |
Triple Output PMIC PRODUCT DATASHEET
AAT2782
SystemPowerTM
Triple Output PMIC: Dual Buck with Low-VIN LDO
General Description
Features
The AAT2782 provides three independently regulated DC outputs: two step-down (Buck) regulators and a single low input voltage, low drop-out (LDO) regulator. Th |
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Последние обновления
| Номер в каталоге | Производители | Описание | |
| 2N3904 |  Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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| NE555 |  ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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