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H11A814 даташит ( Даташиты, Даташиты )

Номер в каталоге Описание Производители PDF
10 H11A817   4-PIN PHOTOTRANSISTOR OPTOCOUPLERS

4–PIN PHOTOTRANSISTOR OPTOCOUPLERS H11AA814 SERIES H11A817 SERIES PACKAGE DIMENSIONS DESCRIPTION The QT Optoelectronics H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package. .380 (9.64) MAX .012 (.30) .007 (.20) .055 (1.40) .047 (1.20) 4 3 .270 (6.86) .248 (6.30) .327 (8.30) MAX .300 (7.62) MIN The H11A817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phot
QT Optoelectronics
QT Optoelectronics
pdf
9 H11A817   4-PIN PHOTOTRANSISTOR OPTOCOUPLERS

4-PIN PHOTOTRANSISTOR OPTOCOUPLERS H11AA814 SERIES PACKAGE H11A617 SERIES H11A817 SERIES H11AA814 SCHEMATIC 1 4 COLLECTOR 4 2 3 EMITTER 1 DESCRIPTION The H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package. The H11A617 and H11A817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package. H11A617 & H11A817 SCHEMATIC A
Fairchild Semiconductor
Fairchild Semiconductor
pdf
8 H11A817A   4-PIN PHOTOTRANSISTOR OPTOCOUPLERS

4–PIN PHOTOTRANSISTOR OPTOCOUPLERS H11AA814 SERIES H11A817 SERIES PACKAGE DIMENSIONS DESCRIPTION The QT Optoelectronics H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package. .380 (9.64) MAX .012 (.30) .007 (.20) .055 (1.40) .047 (1.20) 4 3 .270 (6.86) .248 (6.30) .327 (8.30) MAX .300 (7.62) MIN The H11A817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phot
QT Optoelectronics
QT Optoelectronics
pdf
7 H11A817A   4-PIN PHOTOTRANSISTOR OPTOCOUPLERS

4-PIN PHOTOTRANSISTOR OPTOCOUPLERS H11AA814 SERIES PACKAGE H11A617 SERIES H11A817 SERIES H11AA814 SCHEMATIC 1 4 COLLECTOR 4 2 3 EMITTER 1 DESCRIPTION The H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package. The H11A617 and H11A817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package. H11A617 & H11A817 SCHEMATIC A
Fairchild Semiconductor
Fairchild Semiconductor
pdf
6 H11A817B   4-PIN PHOTOTRANSISTOR OPTOCOUPLERS

4–PIN PHOTOTRANSISTOR OPTOCOUPLERS H11AA814 SERIES H11A817 SERIES PACKAGE DIMENSIONS DESCRIPTION The QT Optoelectronics H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package. .380 (9.64) MAX .012 (.30) .007 (.20) .055 (1.40) .047 (1.20) 4 3 .270 (6.86) .248 (6.30) .327 (8.30) MAX .300 (7.62) MIN The H11A817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phot
QT Optoelectronics
QT Optoelectronics
pdf
5 H11A817B   4-PIN PHOTOTRANSISTOR OPTOCOUPLERS

4-PIN PHOTOTRANSISTOR OPTOCOUPLERS H11AA814 SERIES PACKAGE H11A617 SERIES H11A817 SERIES H11AA814 SCHEMATIC 1 4 COLLECTOR 4 2 3 EMITTER 1 DESCRIPTION The H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package. The H11A617 and H11A817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package. H11A617 & H11A817 SCHEMATIC A
Fairchild Semiconductor
Fairchild Semiconductor
pdf
4 H11A817C   4-PIN PHOTOTRANSISTOR OPTOCOUPLERS

4–PIN PHOTOTRANSISTOR OPTOCOUPLERS H11AA814 SERIES H11A817 SERIES PACKAGE DIMENSIONS DESCRIPTION The QT Optoelectronics H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package. .380 (9.64) MAX .012 (.30) .007 (.20) .055 (1.40) .047 (1.20) 4 3 .270 (6.86) .248 (6.30) .327 (8.30) MAX .300 (7.62) MIN The H11A817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phot
QT Optoelectronics
QT Optoelectronics
pdf
3 H11A817C   4-PIN PHOTOTRANSISTOR OPTOCOUPLERS

4-PIN PHOTOTRANSISTOR OPTOCOUPLERS H11AA814 SERIES PACKAGE H11A617 SERIES H11A817 SERIES H11AA814 SCHEMATIC 1 4 COLLECTOR 4 2 3 EMITTER 1 DESCRIPTION The H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package. The H11A617 and H11A817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package. H11A617 & H11A817 SCHEMATIC A
Fairchild Semiconductor
Fairchild Semiconductor
pdf



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