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H04N60 даташит электронных компонентов


H04N60 Datasheet ( Даташиты )

Номер Номер в каталоге Описание Производители PDF
1 H04N60  H04N60 Даташит - Hi-Sincerity Mocroelectronics N-Channel Power Field Effect Transistor

www.DataSheet4U.net HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200404 Issued Date : 2004.07.01 Revised Date : 2005.09.28 Page No. : 1/5 H04N60 Series N-Channel Power Field Effect Transistor H04N60 Series Pin Assignment Tab Description This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switchin
Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics
PDF


H04N6 даташита ( переписка )

Номер в каталоге Описание Производители PDF
H04N60  H04N60 Даташит - Hi-Sincerity Mocroelectronics N-Channel Power Field Effect Transistor

www.DataSheet4U.net HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200404 Issued Date : 2004.07.01 Revised Date : 2005.09.28 Page No. : 1/5 H04N60 Series N-Channel Power Field Effect Transistor H04N60 Series Pin Assignment Tab Description This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switchin
Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics
PDF



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