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H03N60 даташитФункция этой детали – «N-channel Power Field Effect Transistor». |
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Номер в каталоге | Производители | Описание | |
H03N60 | Hi-Sincerity Mocroelectronics |
N-Channel Power Field Effect Transistor
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200602 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5
H03N60 Series
N-Channel Power Field Effect Transistor
H03N60 Series Pin Assignment
Tab
Description
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy effi |
Это результат поиска, начинающийся с "03N60", "H03" |
Номер в каталоге | Производители | Описание | |
03N60C3 | Infineon Technologies |
SPP03N60C3 / SPD03N60C3 / SPA03N60C3 Final data
SPP03N60C3, SPB03N60C3 SPA03N60C3
VDS @ Tjmax RDS(on) ID 650 1.4 3.2 V Ω A
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated
• Extreme
P-TO220-3-31
P-TO2 |
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03N60S5 | INFINEON |
SPP03N60S5 Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance
SPP03N60S5
VDS RDS(on)
ID
600 V 1.4 Ω 3.2 A
P |
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CJP03N60 | Jiangsu Changjiang Electronics Technology |
Power MOSFET ( Transistor )
CJP03N60
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FMP03N60E | Fuji Electric |
N-CHANNEL SILICON POWER MOSFET FMP03N60E
Super FAP-E3 series
Features
Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche |
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FMV03N60E | Fuji Electric |
N-CHANNEL SILICON POWER MOSFET Datasheet.es
FMV03N60E
Super FAP-E3 series
Features
Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0 |
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IKD03N60RF | Infineon Technologies |
IGBT IGBT
IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage
IKD03N60RF
TRENCHSTOPTMRC-Seriesforhardswitchingapplicationsupto30kHz
Datasheet
IndustrialPowerControl
IKD03N60RF
TRENCHSTOPTMRC-DrivesFastSeries
IGBTwithintegrateddiodeinpackagesof |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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