DataSheet26.com

H03N60 даташит электронных компонентов


H03N60 Datasheet ( Даташиты )

Номер Номер в каталоге Описание Производители PDF
1 H03N60  H03N60 Даташит - Hi-Sincerity Mocroelectronics N-Channel Power Field Effect Transistor

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200602 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 H03N60 Series N-Channel Power Field Effect Transistor H03N60 Series Pin Assignment Tab Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation m
Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics
PDF


H03N6 даташита ( переписка )

Номер в каталоге Описание Производители PDF
H03N60  H03N60 Даташит - Hi-Sincerity Mocroelectronics N-Channel Power Field Effect Transistor

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200602 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 H03N60 Series N-Channel Power Field Effect Transistor H03N60 Series Pin Assignment Tab Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation m
Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics
PDF



Ссылка Поделиться :
[1] 

Последние обновления
[ 118F ]  [ 12N90 ]  [ 13F ]  [ 14FF ]  [ 18FF ]  [ 1N50 ]  [ 1N50Z ]  [ 1N60A ]  [ 1N60Z ]  [ 1N65 ]  [ 1N65A ]  [ 1N70 ]  [ 1N90 ]  [ 20NM60 ]  [ 25L2026C ]  [ 2N65L ]  [ 2N90 ]  [ 2SC4375 ]  [ 3N65 ]  [ 3N90 ]  [ 41F ]  [ 49F ]  [ 49FA ]  [ 4N50 ]  [ 4N80

Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z




DataSheet26.com    |   2017    |   Контакты    |   English