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H01N60 даташит электронных компонентов


H01N60 Datasheet ( Даташиты )

Номер Номер в каталоге Описание Производители PDF
1 H01N60  H01N60 Даташит - HI-SINCERITY N-Channel Power Field Effect Transistor

HI-SINCERITY MICROELECTRONICS CORP. H01N60 Series N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switch
HI-SINCERITY
HI-SINCERITY
PDF


H01N6 даташита ( переписка )

Номер в каталоге Описание Производители PDF
H01N60  H01N60 Даташит - HI-SINCERITY N-Channel Power Field Effect Transistor

HI-SINCERITY MICROELECTRONICS CORP. H01N60 Series N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switch
HI-SINCERITY
HI-SINCERITY
PDF



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