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G901AS-DC24-NIL2 даташитФункция этой детали – «3.3 V 300ma Low Dropout Regulator». |
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Номер в каталоге | Производители | Описание | |
G901 | ETC |
3.3 V 300MA LOW DROPOUT REGULATOR Global Mixed-mode Technology Inc.
G901
3.3V 300mA Low Dropout Regulator
Features
Dropout voltage typically 0.45V @ IO = 300mA Output current in excess of 300mA Output voltage accuracy +3% Quiescent current, typically 0.6mA Internal short circuit current limit Internal over temperature protection
General Description
The G901 positive 3.3V voltage regulator features the ability to source 300mA of output current with a dropout voltage of typically 0.45V. A low quiescent current is provided. The typical |
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G9012 | GTM |
PNP EPITAXIAL TRANSISTOR
ISSUED DATE :2004/11/18 REVISED DATE :
G9012
Description
P N P E PI TA XI A L T R AN S I S TO R
The G9012 is designed for use in 1W output amplifier of portable radios in class B push-pull operation.
Package Dimensions
D E S1
TO-92
A
S E A T IN G PLANE
b1
L
REF. A S1 b b1 C
e1
e
b
C
Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51
REF. D E L e1 e
Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66
Absolute Maximum Ratings at Ta = 25
Parameter Junction |
|
G9013 | GTM |
NPN EPITAXIAL TRANSISTOR
ISSUED DATE :2004/11/18 REVISED DATE :
G9013
Description
N P N E PI TA XI A L T R AN S I S TO R
The G9013 is designed for use in 1W output amplifier of portable radios in class B push-pull operation.
Package Dimensions
D E S1
TO-92
A
S E A T IN G PLANE
b1
L
REF. A S1 b b1 C
e1
e
b
C
Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51
REF. D E L e1 e
Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66
Absolute Maximum Ratings at Ta = 25
Parameter Junction |
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G9014 | GTM |
NPN EPITAXIAL TRANSISTOR
ISSUED DATE :2004/11/10 REVISED DATE :
G9014
Description
N P N E PI TA XI A L T R AN S I S TO R
The G9014 is designed for general purpose amplifier applications.
Package Dimensions
D E S1
TO-92
A
S E A T IN G PLANE
b1
L
REF. A S1 b b1 C
e1
e
b
C
Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51
REF. D E L e1 e
Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66
Absolute Maximum Ratings at Ta = 25
Parameter Junction Temperature Storage Temperature Colle |
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G9015 | GTM |
PNP EPITAXIAL TRANSISTOR
ISSUED DATE :2004/11/18 REVISED DATE :
G9015
Description
P N P E PI TA XI A L PL AN A R T RA N SI STO R
The G9015 is designed for use in pre-amplifier of low level and low noise.
Package Dimensions
D E S1
TO-92
A
b1 S E A T IN G PLANE
L
REF. A S1 b b1 C
e1
e
b
C
Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51
REF. D E L e1 e
Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66
Absolute Maximum Ratings at Ta = 25
Parameter Junction Temperature Storage T |
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G9018 | GTN |
NPN epitaxial planar transistor ISSUED DATE :2004/11/18 REVISED DATE :
G9018
Description
NPN EPITAXIAL PLANAR T RANSISTOR
The G9018 is designed for use in AM/FM amplifier and local oscillator of FM/VHF tuner.
Package Dimensions
D E S1
TO-92
A
S E A T IN G PLANE
b1
L
REF. A S1 b b1 C
e1
e
b
C
Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51
REF. D E L e1 e
Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66
Absolute Maximum Ratings at Ta = 25
Parameter Junction Temperature
Symbol Tj |
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G901T21U | ETC |
3.3 V 300MA LOW DROPOUT REGULATOR Global Mixed-mode Technology Inc.
G901
3.3V 300mA Low Dropout Regulator
Features
Dropout voltage typically 0.45V @ IO = 300mA Output current in excess of 300mA Output voltage accuracy +3% Quiescent current, typically 0.6mA Internal short circuit current limit Internal over temperature protection
General Description
The G901 positive 3.3V voltage regulator features the ability to source 300mA of output current with a dropout voltage of typically 0.45V. A low quiescent current is provided. The typical |
|
G901T24U | ETC |
3.3 V 300MA LOW DROPOUT REGULATOR |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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