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G5N120BND даташитФункция этой детали – «Hgtg5n120bnd». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
G5N120BND | Fairchild Semiconductor |
HGTG5N120BND HGTG5N120BND, HGTP5N120BND
Data Sheet May 2003
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
The HGTG5N120BND and HGTP5N120BND are NonPunch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49308. The Diode used is the d |
Это результат поиска, начинающийся с "5N120BND", "G5N120" |
Номер в каталоге | Производители | Описание | |
HGT1S5N120BNDS | Intersil Corporation |
21A/ 1200V/ NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS
Data Sheet January 2000 File Number 4597.2
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of th |
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HGTG5N120BND | Fairchild Semiconductor |
21A/ 1200V/ NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes HGTG5N120BND, HGTP5N120BND
Data Sheet May 2003
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
The HGTG5N120BND and HGTP5N120BND are NonPunch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs co |
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HGTG5N120BND | Intersil Corporation |
21A/ 1200V/ NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS
Data Sheet January 2000 File Number 4597.2
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of th |
|
HGTP5N120BND | Fairchild Semiconductor |
21A/ 1200V/ NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes HGTG5N120BND, HGTP5N120BND
Data Sheet May 2003
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
The HGTG5N120BND and HGTP5N120BND are NonPunch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs co |
|
HGTP5N120BND | Intersil Corporation |
21A/ 1200V/ NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS
Data Sheet January 2000 File Number 4597.2
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of th |
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16Y25120M2L15J3 | ETC |
Ultrasonic Piezoelectric Atomizing Transducer Ultrasonic Piezoelectric Atomizing Transducer
We are producing ultrasonic piezoelectric atomizing transducers of compact and higher performances. Our specially electrode protection layer of the transducer is far superior to Nickel or Titanium electrode used in traditional transd |
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |