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G5N120BND даташит

Функция этой детали – «Hgtg5n120bnd».



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Номер в каталоге Производители Описание PDF
G5N120BND Fairchild Semiconductor
Fairchild Semiconductor
  HGTG5N120BND

HGTG5N120BND, HGTP5N120BND Data Sheet May 2003 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BND and HGTP5N120BND are NonPunch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49308. The Diode used is the d
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Это результат поиска, начинающийся с "5N120BND", "G5N120"

Номер в каталоге Производители Описание PDF
HGT1S5N120BNDS Intersil Corporation
Intersil Corporation

21A/ 1200V/ NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Data Sheet January 2000 File Number 4597.2 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of th
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HGTG5N120BND Fairchild Semiconductor
Fairchild Semiconductor

21A/ 1200V/ NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

HGTG5N120BND, HGTP5N120BND Data Sheet May 2003 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BND and HGTP5N120BND are NonPunch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs co
pdf
HGTG5N120BND Intersil Corporation
Intersil Corporation

21A/ 1200V/ NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Data Sheet January 2000 File Number 4597.2 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of th
pdf
HGTP5N120BND Fairchild Semiconductor
Fairchild Semiconductor

21A/ 1200V/ NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

HGTG5N120BND, HGTP5N120BND Data Sheet May 2003 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BND and HGTP5N120BND are NonPunch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs co
pdf
HGTP5N120BND Intersil Corporation
Intersil Corporation

21A/ 1200V/ NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Data Sheet January 2000 File Number 4597.2 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of th
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16Y25120M2L15J3 ETC
ETC

Ultrasonic Piezoelectric Atomizing Transducer

Ultrasonic Piezoelectric Atomizing Transducer We are producing ultrasonic piezoelectric atomizing transducers of compact and higher performances. Our specially electrode protection layer of the transducer is far superior to Nickel or Titanium electrode used in traditional transd
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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