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G4BH20K-L даташитФункция этой детали – «Irg4bh20k-l». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
G4BH20K-L | International Rectifier |
IRG4BH20K-L PD -93961
IRG4BH20K-L
INSULATED GATE BIPOLAR TRANSISTOR
Features
• High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V
• Combines low conduction losses with high switching speed
• Latest generation design provides tighter parameter distribution and higher efficiency than previous generations
• Industry standard TO-262 package
Benefits
• As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switch |
Это результат поиска, начинающийся с "4BH20K", "G4BH20" |
Номер в каталоге | Производители | Описание | |
IRG4BH20K-L | International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR PD -93961
IRG4BH20K-L
INSULATED GATE BIPOLAR TRANSISTOR
Features
• High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V
• Combines low conduction losses with high switching speed
• Latest generation design provides tighte |
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IRG4BH20K-LPBF | International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR Lead-Free
PD- 95765A
IRG4BH20K-LPbF
www.irf.com
1 01/21/2010
IRG4BH20K-LPbF
2 www.irf.com
IRG4BH20K-LPbF
www.irf.com
3
IRG4BH20K-LPbF
4 www.irf.com
IRG4BH20K-LPbF
www.irf.com
5
IRG4BH20K-LPbF
6 www.irf.com
IRG4BH20K-LPbF
RL =
VCC ICM
0 - VCC
480µF
Fig. 13b - |
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IRG4BH20K-S | International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR PD -93960
IRG4BH20K-S
INSULATED GATE BIPOLAR TRANSISTOR
Features
• High short circuit rating optimized for motor control, tsc =10µs @ VCC = 720V , TJ = 125°C, VGE = 15V
• Combines low conduction losses with high switching speed
• Latest generation design provides tight |
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IRG4BH20K-SPbF | International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR PD -95891
IRG4BH20K-SPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
• High short circuit rating optimized for motor control, tsc =10µs @ VCC = 720V , TJ = 125°C, VGE = 15V
• Combines low conduction losses with high switching speed
• Latest generation design provides ti |
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0420CDMC | Sumida |
SMD Power Inductor SMD Power Inductor 0420CDMC/DS
Description • Magnetically shielded. • L W H: 4.75 4.35 2.0 mm Max. • Product weight: 0.17g(Ref.) • Moisture Sensitivity Level: 1 • RoHS compliance. • Halogen Free available.
RoHS Halogen Free
Dimension - [mm]
4.5±0.25 5 2 . 0 ± 1 . 4 |
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0420CDMCB | Sumida |
SMD Power Inductor SMD Power Inductor 0420CDMCB/DS
Description • Magnetically shielded. • L W H: 4.75 4.35 2.0 mm Max. • Product weight: 0.17g(Ref.) • Moisture Sensitivity Level: 1 • RoHS compliance. • Halogen Free available.
RoHS Halogen Free
Dimension - [mm]
4.5±0.25 5 2 . 0 ± 1 . |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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