|
G4BC20UD даташитФункция этой детали – «Irg4bc20ud». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
G4BC20UD | International Rectifier |
IRG4BC20UD PD 91449B
IRG4BC20UD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFRED ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-220AB package
C
UltraFast CoPack IGBT
|
Это результат поиска, начинающийся с "4BC20UD", "G4BC2" |
Номер в каталоге | Производители | Описание | |
IRG4BC20UD | IRF |
INSULATED GATE BIPOLAR TRANSISTOR PD-91449C
IRG4BC20UD
INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode
• Generation 4 IGBT design provides tigh |
|
IRG4BC20UD-S | IRF |
INSULATED GATE BIPOLAR TRANSISTOR PD- 94077
IRG4BC20UD-S
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution |
|
IRG4BC20UD-SPBF | International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR PD- 95565A
IRG4BC20UD-SPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
UltraFast CoPack IGBT
Features
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode
• Generation 4 IGBT design provides tig |
|
0420CDMC | Sumida |
SMD Power Inductor SMD Power Inductor 0420CDMC/DS
Description • Magnetically shielded. • L W H: 4.75 4.35 2.0 mm Max. • Product weight: 0.17g(Ref.) • Moisture Sensitivity Level: 1 • RoHS compliance. • Halogen Free available.
RoHS Halogen Free
Dimension - [mm]
4.5±0.25 5 2 . 0 ± 1 . 4 |
|
0420CDMCB | Sumida |
SMD Power Inductor SMD Power Inductor 0420CDMCB/DS
Description • Magnetically shielded. • L W H: 4.75 4.35 2.0 mm Max. • Product weight: 0.17g(Ref.) • Moisture Sensitivity Level: 1 • RoHS compliance. • Halogen Free available.
RoHS Halogen Free
Dimension - [mm]
4.5±0.25 5 2 . 0 ± 1 . |
|
0420CDMCBDS-100MC | Sumida |
SMD Power Inductor SMD Power Inductor 0420CDMCB/DS
Description • Magnetically shielded. • L W H: 4.75 4.35 2.0 mm Max. • Product weight: 0.17g(Ref.) • Moisture Sensitivity Level: 1 • RoHS compliance. • Halogen Free available.
RoHS Halogen Free
Dimension - [mm]
4.5±0.25 5 2 . 0 ± 1 . |
[1]  
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |