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G4BC20F даташит ( Даташиты, Даташиты )

Номер Номер в каталоге Описание Производители PDF
2 G4BC20F   IRG4BC20F

PD - 91602A IRG4BC20F INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.66V @VGE = 15V, IC = 9.0A n-channel Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized fo
International Rectifier
International Rectifier
G4BC20F pdf Даташит
1 G4BC20FD   IRG4BC20FD

PD 91601A IRG4BC20FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-220AB package C Fast CoPack IGBT VCES
International Rectifier
International Rectifier
G4BC20FD pdf Даташит


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свойства компонента (features), его основные параметры (quick reference data), обозначение на принципиальных схемах (symbol), краткое описание (general description).



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