G-100 даташит ( Даташиты, Даташиты ) |
| Номер | Номер в каталоге | Описание | Производители | |
| 1 | G-100 | Detector Components Detector Components
Part No:
1.00 dia
G – 100
G-100 Chip
0.20
0.50
0.71 dia BC
GND Anode
Case Ground Pin
Cathode
ELECTRO OPTICAL SYSTEMS offers room temperature photodiode detectors. The units have state-of-the-art sensitivity and may be supported by accessories such as optical filters (longpass and bandpass), integral preamplifiers, and infrared source assemblies. These units find applications in industrial control systems, gas analyzers, thermal sensors, and general infrared instrumentation.
SPECIFICATIONS |
 Electro-Optical Systems |
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G даташита ( переписка ) |
| Номер в каталоге | Описание | Производители | |
| G057QN01_V1 | LCD Module |
 AUO |
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| G081PU11500M | High Power Fiber Coupled Infrared Laser Diode |
 Roithner |
|
| G081PU210W | High Power Fiber Coupled Infrared Laser Diode |
Roithner |
|
| G081PU25W | High Power Fiber Coupled Infrared Laser Diode |
Roithner |
|
| G081PU312W | High Power Fiber Coupled Infrared Laser Diode |
Roithner |
|
| G081PU314W | High Power Fiber Coupled Infrared Laser Diode |
Roithner |
|
| G081PU325W | High Power Fiber Coupled Infrared Laser Diode |
Roithner |
|
| G098PU1750M | High Power Fiber Coupled Infrared Laser Diode |
Roithner |
|
| G098PU210W | High Power Fiber Coupled Infrared Laser Diode |
Roithner |
|
| G098PU25W | High Power Fiber Coupled Infrared Laser Diode |
Roithner |
|
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Последние обновления
| Номер в каталоге | Описание | Производители | |
| CD4515BC | The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors. These circuits are primarily used in decoding applications where low power dissipation and/or high noise immunity is required. |
 Fairchild Semiconductor |
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| GUVA-S12SD | This electronic part is an UV-B Sensor. |
 ROITHNER |
|
| HV101WU1-1E6 | HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices. This module has a 10.1 inch diagonally measured active area with WUXGA resolutions (1920 horizontal by 1200 vertical pixel array). |
 HYDIS |
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| KTD1145 | This electronic part is an EPITAXIAL PLANAR NPN TRANSISTOR. |
 KEC |
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