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FTW20N60A даташит

Функция этой детали – «N-channel Enhancement».



Показать результаты поиска

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Номер в каталоге Производители Описание PDF
FTW20N60A IPS
IPS
  N-Channel Enhancement

Empower The World InPower Product Lines Confidential Free Datasheet http:/// Discrete Power Products Empower The World IPS Baseline Discrete Power Power IC IC MOSFET BJT Rectifier IGBT Planar Trench Depletion CoolMOS Mode NPN P-N Schottky Planar Trench Confidential Free Datasheet http:/// 60-1200V 20-100V 500-850V 500-900V 200-1500V 200-1200V 12-200V NPT PT 300-1200V 300-1200V 2 InPower Mosfet Products (1) Empower The World Part Number FTD09N03N FTD06
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Это результат поиска, начинающийся с "20N60A", "FTW20N"

Номер в каталоге Производители Описание PDF
20N60A4D Fairchild Semiconductor
Fairchild Semiconductor

HGTG20N60A4D

HGTG20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a M
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CS20N60A8H Huajing Microelectronics
Huajing Microelectronics

Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS20N60 A8H ○R General Description: CS20N60 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 600 20 250 0.36
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CS20N60AND TGW
TGW

Silicon N-Channel Power MOSFET

Huajing Discrete Devices Silicon General Description: CS20N60AND, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be
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CS20N60ANH Huajing Microelectronics
Huajing Microelectronics

Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS20N60 ANH ○R General Description: CS20N60 ANH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 600 20 250 0.36
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HGT1S20N60A4S9A Fairchild Semiconductor
Fairchild Semiconductor

SMPS Series N-Channel IGBTs

Data Sheet HGT1S20N60A4S9A March 2006 600V, SMPS Series N-Channel IGBTs The HGT1S20N60A4S9A is MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state
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HGT4E20N60A4DS Fairchild Semiconductor
Fairchild Semiconductor

600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

HGTG20N60A4D, HGT4E20N60A4DS Data Sheet APRIL 2002 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedanc
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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