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FTW20N60A даташитФункция этой детали – «N-channel Enhancement». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
FTW20N60A | IPS |
N-Channel Enhancement Empower The World
InPower Product Lines
Confidential
Free Datasheet http:///
Discrete Power Products
Empower The World
IPS Baseline Discrete Power Power IC IC
MOSFET
BJT
Rectifier
IGBT
Planar
Trench
Depletion CoolMOS Mode
NPN
P-N
Schottky
Planar
Trench
Confidential
Free Datasheet http:///
60-1200V
20-100V
500-850V
500-900V
200-1500V
200-1200V
12-200V
NPT
PT
300-1200V
300-1200V
2
InPower Mosfet Products (1)
Empower The World
Part Number FTD09N03N FTD06 |
Это результат поиска, начинающийся с "20N60A", "FTW20N" |
Номер в каталоге | Производители | Описание | |
20N60A4D | Fairchild Semiconductor |
HGTG20N60A4D HGTG20N60A4D
Data Sheet February 2009
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a M |
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CS20N60A8H | Huajing Microelectronics |
Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET
CS20N60 A8H
○R
General Description:
CS20N60 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD(TC=25℃) RDS(ON)Typ
600 20 250 0.36
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CS20N60AND | TGW |
Silicon N-Channel Power MOSFET Huajing Discrete Devices Silicon General Description:
CS20N60AND, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be |
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CS20N60ANH | Huajing Microelectronics |
Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET
CS20N60 ANH
○R
General Description:
CS20N60 ANH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD(TC=25℃) RDS(ON)Typ
600 20 250 0.36
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HGT1S20N60A4S9A | Fairchild Semiconductor |
SMPS Series N-Channel IGBTs Data Sheet
HGT1S20N60A4S9A
March 2006
600V, SMPS Series N-Channel IGBTs
The HGT1S20N60A4S9A is MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state |
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HGT4E20N60A4DS | Fairchild Semiconductor |
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode HGTG20N60A4D, HGT4E20N60A4DS
Data Sheet APRIL 2002
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedanc |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |