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FTW20N50A даташит

Функция этой детали – «N-channel Mosfet».



Показать результаты поиска

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Номер в каталоге Производители Описание PDF
FTW20N50A IPS
IPS
  N-Channel MOSFET

FTW20N50A General Description˖ FTW20N50A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-3P(N), which accords with the RoHS standard.. Features˖ z Fast Switching z Low ON Resistance(RdsoQİŸ z Low Gate Charge (Typical Data:130nC) z Low Re
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Это результат поиска, начинающийся с "20N50A", "FTW20N"

Номер в каталоге Производители Описание PDF
CS20N50A8H Huajing Microelectronics
Huajing Microelectronics

Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS20N50 A8H ○R General Description: CS20N50 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 500 20 230 0.25
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CS20N50ANH Huajing Discrete Devices
Huajing Discrete Devices

Silicon N-Channel Power MOSFET

Huajing Discrete Devices Silicon N-Channel Power MOSFET ○R CS20N50 ANH General Description: CS20N50 ANH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RD
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TMAN20N50A TRinno
TRinno

N-channel MOSFET

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification BVDSS 500V TMAN20N50A N-channel MOSFET ID RDS(on) 20A < 0.3W Device TMAN20N50A Package TO-3PN Marking TMAN20N50A Remark RoHS Absolute Maximum Rat
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TMP20N50A TRinno
TRinno

N-channel MOSFET

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP20N50A(G)/TMPF20N50A(G) BVDSS 500V N-channel MOSFET ID RDS(on) 18A < 0.3W Device TMP20N50A / TMPF20N50A TMP20N50AG / TMP
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TMP20N50AG TRinno
TRinno

N-channel MOSFET

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP20N50A(G)/TMPF20N50A(G) BVDSS 500V N-channel MOSFET ID RDS(on) 18A < 0.3W Device TMP20N50A / TMPF20N50A TMP20N50AG / TMP
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TMPF20N50A TRinno
TRinno

N-channel MOSFET

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP20N50A(G)/TMPF20N50A(G) BVDSS 500V N-channel MOSFET ID RDS(on) 18A < 0.3W Device TMP20N50A / TMPF20N50A TMP20N50AG / TMP
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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