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FTW20N50A даташитФункция этой детали – «N-channel Mosfet». |
Показать результаты поиска |

Номер в каталоге | Производители | Описание | |
FTW20N50A | ![]() IPS |
N-Channel MOSFET FTW20N50A
General Description˖
FTW20N50A, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-3P(N), which accords with the RoHS standard..
Features˖
z Fast Switching z Low ON Resistance(RdsoQİ z Low Gate Charge (Typical Data:130nC) z Low Re |
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Это результат поиска, начинающийся с "20N50A", "FTW20N" |
Номер в каталоге | Производители | Описание | |
CS20N50A8H | ![]() Huajing Microelectronics |
Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET
CS20N50 A8H
○R
General Description:
CS20N50 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD (TC=25℃) RDS(ON)Typ
500 20 230 0.25 |
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CS20N50ANH | ![]() Huajing Discrete Devices |
Silicon N-Channel Power MOSFET Huajing Discrete Devices Silicon N-Channel Power MOSFET
○R
CS20N50 ANH
General Description:
CS20N50 ANH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD (TC=25℃) RD |
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TMAN20N50A | ![]() TRinno |
N-channel MOSFET Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification
BVDSS 500V
TMAN20N50A
N-channel MOSFET ID RDS(on) 20A < 0.3W
Device TMAN20N50A
Package TO-3PN
Marking TMAN20N50A
Remark RoHS
Absolute Maximum Rat |
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TMP20N50A | ![]() TRinno |
N-channel MOSFET Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification
TMP20N50A(G)/TMPF20N50A(G)
BVDSS 500V
N-channel MOSFET ID RDS(on) 18A < 0.3W
Device TMP20N50A / TMPF20N50A TMP20N50AG / TMP |
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TMP20N50AG | ![]() TRinno |
N-channel MOSFET Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification
TMP20N50A(G)/TMPF20N50A(G)
BVDSS 500V
N-channel MOSFET ID RDS(on) 18A < 0.3W
Device TMP20N50A / TMPF20N50A TMP20N50AG / TMP |
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TMPF20N50A | ![]() TRinno |
N-channel MOSFET Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification
TMP20N50A(G)/TMPF20N50A(G)
BVDSS 500V
N-channel MOSFET ID RDS(on) 18A < 0.3W
Device TMP20N50A / TMPF20N50A TMP20N50AG / TMP |
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Последние обновления

Номер в каталоге | Производители | Описание | |
2N3904 | ![]() Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ![]() ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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DataSheet26.com | 2020 | Контакты |