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Datasheet FQPF20N06L Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 FQPF20N06L   60V LOGIC N-Channel MOSFET

FQPF20N06L — N-Channel QFET® MOSFET FQPF20N06L N-Channel QFET® MOSFET 60 V, 15.7 A, 55 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially ta
 Fairchild Semiconductor
Fairchild Semiconductor		 datasheet FQPF20N06L pdf

FQPF20N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
FQPF20N60

20A N-Channel MOSFET

FQP20N60/FQPF20N60 600V,20A N-Channel MOSFET General Description Product Summary The FQP20N60 & FQPF20N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By p
 Oucan Semi
Oucan Semi		 datasheet pdf - Oucan Semi
FQPF20N06

60V N-Channel MOSFET

FQPF20N06 — N-Channel QFET® MOSFET FQPF20N06 N-Channel QFET® MOSFET 60 V, 15 A, 60 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has be
 Fairchild Semiconductor
Fairchild Semiconductor		 datasheet pdf - Fairchild Semiconductor
FQPF20N06L

60V LOGIC N-Channel MOSFET

FQPF20N06L — N-Channel QFET® MOSFET FQPF20N06L N-Channel QFET® MOSFET 60 V, 15.7 A, 55 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology ha
 Fairchild Semiconductor
Fairchild Semiconductor		 datasheet pdf - Fairchild Semiconductor


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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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