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FQA12N60 даташитФункция этой детали – «600v N-channel Mosfet». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
FQA12N60 | Fairchild Semiconductor |
600V N-Channel MOSFET FQA12N60
April 2000
QFET
FQA12N60
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
TM
Features
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Это результат поиска, начинающийся с "12N60", "FQA12" |
Номер в каталоге | Производители | Описание | |
12N60 | nELL |
N-Channel Power MOSFET / Transistor SEMICONDUCTOR
I2N60 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET 12A, 600Volts
DESCRIPTION
The Nell 12N60 is a three-terminal silicon device with current conduction capability of 12A, fast switching speed, low on-state resistance, breakdown voltage rating of |
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12N60 | CHONGQING PINGYANG |
N-CHANNEL MOSFET 12N60(F,B,H)
12A mps,600 Volts N-CHANNEL MOSFET
FEATURE
12A,600V,RDS(ON)=0.7Ω@VGS=10V/6A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-220AB 12N60
ITO-220AB 12N60F
TO-263 12N60B
TO-262 12N60H
Absolute M |
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12N60 | Inchange Semiconductor |
N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
12N60
·FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V (Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.7Ω(Max) ·Avalanche Energy Specified ·Fast Switc |
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12N60 | Unisonic Technologies |
600/650 Volts N-CHANNEL MOSFET UNISONIC TECHNOLOGIES CO., LTD 12N60
12 Amps, 600/650 Volts N-CHANNEL MOSFET
Power MOSFET
DESCRIPTION
The UTC 12N60 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTC’s proprietary, planar stripe, DMOS t |
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12N60A | nELL |
N-Channel Power MOSFET / Transistor SEMICONDUCTOR
I2N60 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET 12A, 600Volts
DESCRIPTION
The Nell 12N60 is a three-terminal silicon device with current conduction capability of 12A, fast switching speed, low on-state resistance, breakdown voltage rating of |
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12N60AF | nELL |
N-Channel Power MOSFET / Transistor SEMICONDUCTOR
I2N60 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET 12A, 600Volts
DESCRIPTION
The Nell 12N60 is a three-terminal silicon device with current conduction capability of 12A, fast switching speed, low on-state resistance, breakdown voltage rating of |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |