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FQA12N60 даташит

Функция этой детали – «600v N-channel Mosfet».



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Номер в каталоге Производители Описание PDF
FQA12N60 Fairchild Semiconductor
Fairchild Semiconductor
  600V N-Channel MOSFET

FQA12N60 April 2000 QFET FQA12N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. TM Features • • • •
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Это результат поиска, начинающийся с "12N60", "FQA12"

Номер в каталоге Производители Описание PDF
12N60 nELL
nELL

N-Channel Power MOSFET / Transistor

SEMICONDUCTOR I2N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 12A, 600Volts DESCRIPTION The Nell 12N60 is a three-terminal silicon device with current conduction capability of 12A, fast switching speed, low on-state resistance, breakdown voltage rating of
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12N60 CHONGQING PINGYANG
CHONGQING PINGYANG

N-CHANNEL MOSFET

12N60(F,B,H) 12A mps,600 Volts N-CHANNEL MOSFET FEATURE  12A,600V,RDS(ON)=0.7Ω@VGS=10V/6A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 12N60 ITO-220AB 12N60F TO-263 12N60B TO-262 12N60H Absolute M
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12N60 Inchange Semiconductor
Inchange Semiconductor

N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 12N60 ·FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V (Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) ·Avalanche Energy Specified ·Fast Switc
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12N60 Unisonic Technologies
Unisonic Technologies

600/650 Volts N-CHANNEL MOSFET

UNISONIC TECHNOLOGIES CO., LTD 12N60 12 Amps, 600/650 Volts N-CHANNEL MOSFET „ Power MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTC’s proprietary, planar stripe, DMOS t
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12N60A nELL
nELL

N-Channel Power MOSFET / Transistor

SEMICONDUCTOR I2N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 12A, 600Volts DESCRIPTION The Nell 12N60 is a three-terminal silicon device with current conduction capability of 12A, fast switching speed, low on-state resistance, breakdown voltage rating of
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12N60AF nELL
nELL

N-Channel Power MOSFET / Transistor

SEMICONDUCTOR I2N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 12A, 600Volts DESCRIPTION The Nell 12N60 is a three-terminal silicon device with current conduction capability of 12A, fast switching speed, low on-state resistance, breakdown voltage rating of
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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