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FPF2101 даташитФункция этой детали – «(fpf2100 - Fpf2107) Intellimax Advanced Load Management Products». |
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Номер в каталоге | Производители | Описание | |
FPF2101 | Fairchild Semiconductor |
(FPF2100 - FPF2107) IntelliMAX Advanced Load Management Products
FPF2100-FPF2107 IntelliMAX™ Advanced Load Management Products
May 2005
FPF2100-FPF2107 IntelliMAX™ Advanced Load Management Products
Features
1.8 to 5.5V Input Voltage Range Controlled Turn-On 200mA and 400mA Current Limit Options Undervoltage Lockout Thermal Shutdown <1uA Shutdown Current Auto restart Fast Current limit Response Time 3us to Moderate Over Currents 20ns to Hard Shorts Fault Blanking
General Description
The FPF2100 through FPF2107 is a family of load switches which provide full |
Это результат поиска, начинающийся с "2101", "FPF2" |
Номер в каталоге | Производители | Описание | |
2N2101 | New Jersey Semiconductor |
Trans GP BJT NPN 65V 1A 3-Pin TO-39 Box |
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2SA2101 | Panasonic Semiconductor |
Silicon PNP Epitaxial Transistor
Power Transistors
2SA2101
Silicon PNP epitaxial planar type
Unit: mm
■ Features
• High-speed switching (tstg: storage time/tf: fall time is short) • Low collector-emitter saturation voltage VCE(sat) • Superior forward current transfer ratio hFE line |
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2SC2101 | HGSemi |
Silicon NPN POWER TRANSISTOR HG
HG RF POWER TRANSISTOR
Semiconductors
ROHS Compliance,Silicon NPN POWER TRANSISTOR
2SC2101
Note : Above parameters , ratings , limits and conditions are subject to change
www.HGSemi.com
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2SD2101 | Hitachi Semiconductor |
Silicon NPN Triple Diffused 2SD2101
Silicon NPN Triple Diffused
Application
Low frequency power amplifier
Outline
TO-220FM
2
1 1. Base 2. Collector 3. Emitter
12 3
3 kΩ (Typ)
150 Ω (Typ) 3
2SD2101
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage E |
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2SD2101 | SavantIC |
SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2101
DESCRIPTION ·With TO-220Fa package ·DARLINGTON APPLICATIONS ·Low frequency power amplifier
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) a |
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2SK2101-01MR | Fuji Electric |
N-channel MOS-FET 2SK2101-01MR
FAP-IIA Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof
N-channel MOS-FET
800V
2,1Ω
6A
50W
> Outline Drawing
> Applications
Switching Regulators UPS DC-DC co |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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