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FJV даташит ( Даташиты, Даташиты )

Номер в каталоге Описание Производители PDF
36 FJV1845   NPN Epitaxial Silicon Transistor

FJV1845 FJV1845 Amplifier Transistor • Complement to FJV992 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Junction Temperature Storage Temperature Value 120 120 5 50 10 300 150 -55 ~ 150 Units V V V mA mA mW °C °C Electrical Characteristics Ta=25°C unle
Fairchild Semiconductor
Fairchild Semiconductor
pdf
35 FJV3101   NPN Epitaxial Silicon Transistor

FJV3101R FJV3101R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=4.7KΩ) • Complement to FJV4101R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R21 NPN Epitaxial Silicon Transistor R1 B R2 E Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector C
Fairchild Semiconductor
Fairchild Semiconductor
pdf
34 FJV3101R   NPN Epitaxial Silicon Transistor

FJV3101R FJV3101R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=4.7KΩ) • Complement to FJV4101R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R21 NPN Epitaxial Silicon Transistor R1 B R2 E Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector C
Fairchild Semiconductor
Fairchild Semiconductor
pdf
33 FJV3102   NPN Epitaxial Silicon Transistor

FJV3102R FJV3102R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=10KΩ) • Complement to FJV4102R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Marking Equivalent Circuit C R22 R1 B R2 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
Fairchild Semiconductor
Fairchild Semiconductor
pdf
32 FJV3102R   NPN Epitaxial Silicon Transistor

FJV3102R FJV3102R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=10KΩ) • Complement to FJV4102R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Marking Equivalent Circuit C R22 R1 B R2 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
Fairchild Semiconductor
Fairchild Semiconductor
pdf
31 FJV3103R   NPN Epitaxial Silicon Transistor

FJV3103R FJV3103R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=22KΩ, R2=22KΩ) • Complement to FJV4103R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Marking Equivalent Circuit C R23 NPN Epitaxial Silicon Transistor R1 B R2 E Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Curr
Fairchild Semiconductor
Fairchild Semiconductor
pdf
30 FJV3104R   NPN Epitaxial Silicon Transistor

FJV3104R FJV3104R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit Driver Circuit, • Built in bias Resistor (R1=47KΩ, R2=47KΩ) • Complement to FJV4104R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Marking Equivalent Circuit C R24 R1 B R2 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
Fairchild Semiconductor
Fairchild Semiconductor
pdf
29 FJV3105R   NPN Epitaxial Silicon Transistor

FJV3105R FJV3105R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=10KΩ) • Complement to FJV4105R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Marking Equivalent Circuit C R25 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collec
Fairchild Semiconductor
Fairchild Semiconductor
pdf



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Последние обновления

Номер в каталоге Описание Производители PDF
CD4515BC

The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors.

Fairchild Semiconductor
Fairchild Semiconductor
pdf
HV101WU1-1E6

HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices.

HYDIS
HYDIS
pdf

На первой странице data sheets приводятся:
свойства компонента (features), его основные параметры (quick reference data), обозначение на принципиальных схемах (symbol), краткое описание (general description).



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