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FJV даташит ( Datasheet PDF , Даташиты ) |
Номер в каталоге | Описание | Производители | ||
36 | FJV1845 | NPN Epitaxial Silicon Transistor FJV1845
FJV1845
Amplifier Transistor
• Complement to FJV992
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Junction Temperature Storage Temperature Value 120 120 5 50 10 300 150 -55 ~ 150 Units V V V mA mA mW °C °C
Electrical Characteristics Ta=25°C unle |
![]() Fairchild Semiconductor |
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35 | FJV3101 | NPN Epitaxial Silicon Transistor FJV3101R
FJV3101R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=4.7KΩ) • Complement to FJV4101R
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector
Equivalent Circuit C
Marking
R21
NPN Epitaxial Silicon Transistor
R1 B R2
E
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector C |
![]() Fairchild Semiconductor |
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34 | FJV3101R | NPN Epitaxial Silicon Transistor FJV3101R
FJV3101R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=4.7KΩ) • Complement to FJV4101R
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector
Equivalent Circuit C
Marking
R21
NPN Epitaxial Silicon Transistor
R1 B R2
E
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector C |
![]() Fairchild Semiconductor |
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33 | FJV3102 | NPN Epitaxial Silicon Transistor FJV3102R
FJV3102R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=10KΩ) • Complement to FJV4102R
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector Marking
Equivalent Circuit C
R22
R1 B R2
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current |
![]() Fairchild Semiconductor |
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32 | FJV3102R | NPN Epitaxial Silicon Transistor FJV3102R
FJV3102R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=10KΩ) • Complement to FJV4102R
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector Marking
Equivalent Circuit C
R22
R1 B R2
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current |
![]() Fairchild Semiconductor |
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31 | FJV3103R | NPN Epitaxial Silicon Transistor FJV3103R
FJV3103R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=22KΩ, R2=22KΩ) • Complement to FJV4103R
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector Marking
Equivalent Circuit C
R23
NPN Epitaxial Silicon Transistor
R1 B R2
E
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Curr |
![]() Fairchild Semiconductor |
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30 | FJV3104R | NPN Epitaxial Silicon Transistor FJV3104R
FJV3104R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit Driver Circuit, • Built in bias Resistor (R1=47KΩ, R2=47KΩ) • Complement to FJV4104R
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector Marking
Equivalent Circuit C
R24
R1 B R2
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current |
![]() Fairchild Semiconductor |
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29 | FJV3105R | NPN Epitaxial Silicon Transistor FJV3105R
FJV3105R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=10KΩ) • Complement to FJV4105R
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector
Marking
Equivalent Circuit C
R25
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collec |
![]() Fairchild Semiconductor |
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Номер в каталоге | Описание | Производители | |
CD4515BC | The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors. |
![]() Fairchild Semiconductor |
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HV101WU1-1E6 | HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices. |
![]() HYDIS |
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