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даташит FDN308P IC Даташиты PDF

Номер в каталоге Описание Производители PDF
1 FDN308P   P-Channel 2.5V Specified PowerTrench MOSFET

FDN308P February 2001 FDN308P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features • –20 V, –1.5 A. RDS(ON) = 125 mΩ @ VGS = –4.5 V RDS(ON) = 190 mΩ @ VGS = –2.5 V • Fast switching speed • High performance trench technology for extremely low RDS(ON) • Sup
Fairchild Semiconductor
Fairchild Semiconductor
pdf



FDN даташита ( переписка )

Номер в каталоге Описание Производители PDF
FDN86246

N-Channel MOSFET

SMD Type Product specification FDN86246 150 V, 1.6 A, 261 m: Features „ Max rDS(on) = 261 m: at VGS = 10 V, ID = 1.6 A „ Max rDS(on) = 359 m: at VGS = 6 V, ID = 1.4 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability
TY Semiconductor
TY Semiconductor
pdf
FDN372S

30V N-Channel PowerTrench SyncFET

FDN372S September 2002 FDN372S 30V N-Channel PowerTrench SyncFET™ General Description The FDN372S is designed to replace a single MOSFET and Schottky diode, used in synchronous DC-DC power supplies, with a single integrated component. This 30V MOSFET is designed to maximiz
Fairchild Semiconductor
Fairchild Semiconductor
pdf
FDN361

N-Channel/ Logic Level/ PowerTrench

FDN361AN April 1999 FDN361AN N-Channel, Logic Level, PowerTrenchΤΜ General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low
Fairchild Semiconductor
Fairchild Semiconductor
pdf
FDN86265P

MOSFET

FDN86265P P-Channel PowerTrench® MOSFET May 2014 FDN86265P P-Channel PowerTrench® MOSFET -150 V, -0.8 A, 1.2 Ω Features General Description „ Max rDS(on) = 1.2 Ω at VGS = -10 V, ID = -0.8 A „ Max rDS(on) = 1.4 Ω at VGS = -6 V, ID = -0.7 A „ Very low RDS-on mid voltage
Fairchild Semiconductor
Fairchild Semiconductor
pdf
FDN8601

MOSFET

FDN8601 N-Channel PowerTrench® MOSFET FDN8601 N-Channel PowerTrench® MOSFET 100 V, 2.7 A, 109 m: July 2010 Features General Description „ Max rDS(on) = 109 m: at VGS = 10 V, ID = 1.5 A „ Max rDS(on) = 175 m: at VGS = 6 V, ID = 1.2 A „ High performance trench technology
Fairchild Semiconductor
Fairchild Semiconductor
pdf
FDN537N

Single N-Channel Power Trench MOSFET

FDN537N Single N-Channel Power Trench® MOSFET FDN537N Single N-Channel Power Trench® MOSFET 30 V, 6.5 A, 23 mΩ January 2013 Features General Description „ Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A „ Max rDS(on) = 36 mΩ at VGS = 4.5 V, ID = 6.0 A „ High performanc
Fairchild Semiconductor
Fairchild Semiconductor
pdf
FDN371N

20V N-Channel PowerTrench MOSFET

FDN371N September 2001 FDN371N 20V N-Channel PowerTrench® MOSFET General Description This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. Features • 2.5 A, 20 V. RDS(ON) = 50 mΩ @ VGS = 4.5
Fairchild Semiconductor
Fairchild Semiconductor
pdf
FDN361AN

N-Channel/ Logic Level/ PowerTrench

FDN361AN April 1999 FDN361AN N-Channel, Logic Level, PowerTrenchΤΜ General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low
Fairchild Semiconductor
Fairchild Semiconductor
pdf
FDN86501LZ

MOSFET

FDN86501LZ N-Channel Shielded Gate PowerTrench® MOSFET October 2015 FDN86501LZ N-Channel Shielded Gate PowerTrench® MOSFET 60 V, 2.6 A, 116 mΩ Features General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 116 mΩ at VGS = 10 V, ID = 2.6 A „ Max rDS(o
Fairchild Semiconductor
Fairchild Semiconductor
pdf
FDN359BN

N-Channel Logic Level PowerTrench MOSFET

FDN359BN January 2006 FDN359BN N-Channel Logic Level PowerTrenchTM MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fairchild’s Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and
Fairchild Semiconductor
Fairchild Semiconductor
pdf



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Номер в каталоге Описание Производители PDF
CD4515BC

The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors.

Fairchild Semiconductor
Fairchild Semiconductor
pdf
HV101WU1-1E6

HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices.

HYDIS
HYDIS
pdf

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свойства компонента (features), его основные параметры (quick reference data), обозначение на принципиальных схемах (symbol), краткое описание (general description).



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