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FDH даташит

Функция этой детали – «High Conductance Low Leakage Diode».



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Номер в каталоге Производители Описание PDF
FDH Fairchild Semiconductor
Fairchild Semiconductor
  High Conductance Low Leakage Diode

FDH300/A / FDLL300/A / FDH333 / FDLL333 Discrete POWER & Signal Technologies FDH/FDLL 300/A / 333 COLOR BAND MARKING DEVICE FDLL300 FDLL300A 1ST BAND BROWN BROWN BROWN 2ND BAND GREEN YELLOW BLUE LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL FDLL333 High Conductance Low Leakage Diode Sourced from Process 1M. See MMBD1501/A-1505/A for characteristics. Absolute Maximum Ratings* Symbol W IV IO IF if if(surge) Working Inverse Voltage Average Rectified Current
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FDH038AN08A1 Fairchild Semiconductor
Fairchild Semiconductor
  N-Channel PowerTrench MOSFET

FDH038AN08A1 February 2003 FDH038AN08A1 N-Channel PowerTrench® MOSFET 75V, 80A, 3.8mΩ Features • r DS(ON) = 3.5mΩ (Typ.), V GS = 10V, ID = 80A • Qg(tot) = 125nC (Typ.), VGS = 10V • Internal Gate Resistor, Rg = 20Ω (Typ.) • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 82690 SOURCE DRAIN GATE G D Applications • 42V Automotive Load Control • Starter / Alternator Systems • Electronic Power Steerin
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FDH047AN08A0 Fairchild Semiconductor
Fairchild Semiconductor
  N-Channel PowerTrench MOSFET 75V/ 80A/ 4.7m

FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 June 2004 FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 N-Channel PowerTrench® MOSFET 75V, 80A, 4.7mΩ Features • rDS(ON) = 4.0mΩ (Typ.), VGS = 10V, ID = 80A • Qg(tot) = 92nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 82684 Applications • 42V Automotive Load Control • Starter / Alternator Systems • Electronic Power Steering Systems • E
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FDH055N15A Fairchild Semiconductor
Fairchild Semiconductor
  MOSFET ( Transistor )

FDH055N15A — N-Channel PowerTrench® MOSFET March 2015 FDH055N15A N-Channel PowerTrench® MOSFET 150 V, 167 A, 5.9 mΩ Features • RDS(on) = 4.8 mΩ (Typ.) @ VGS = 10 V, ID = 120 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state re
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FDH1000 Fairchild Semiconductor
Fairchild Semiconductor
  High Conductance Switching Diodes

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FDH1040 TOKO
TOKO
  Fixed Inductors

Fixed Inductors for Surface Mounting FDH1040/FDH1040B Inductance Range: 0.36~0.56µH DIMENSIONS FDH1040 11.2 4.0 Max. 2.55 (6.0) 2.55 FDH1040B 11.3 4.0 Max. 2.35 (6.6) 2.35 10.2 10.2 7.5 4.0 Tolerance : ±0.3 (Unit: mm) Recommended patterns FDH1040 FDH1040B 8.1 4.1 5.4 4.1 (Unit: mm) 3.8 6.0 3.8 (Unit: mm) FEATURES 11.3×10.2mm square and 4.0mm Max. height. Magnetically shielded construction low DC resistance. Suitable for large current The use of magnetic metal alloy powder ensure
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FDH1040B TOKO
TOKO
  Fixed Inductors

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FDH15N50 Fairchild Semiconductor
Fairchild Semiconductor
  15A/ 500V/ 0.38 Ohm/ N-Channel SMPS Power MOSFET

FDH15N50 / FDP15N50 / FDB15N50 August 2003 FDH15N50 / FDP15N50 / FDB15N50 15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET Applications Switch Mode Power Supplies(SMPS), such as • PFC Boost • Two-Switch Forward Converter • Single Switch Forward Converter • Flyback Converter • Buck Converter • High Speed Switching Features • Low Gate Charge Requirement Qg results in Simple Drive • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness • Reduced rDS(ON) • Reduced Miller Capacitance and Low In
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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