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FDH даташитФункция этой детали – «High Conductance Low Leakage Diode». |
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Номер в каталоге | Производители | Описание | |
FDH | ![]() Fairchild Semiconductor |
High Conductance Low Leakage Diode FDH300/A / FDLL300/A / FDH333 / FDLL333
Discrete POWER & Signal Technologies
FDH/FDLL 300/A / 333
COLOR BAND MARKING DEVICE FDLL300 FDLL300A 1ST BAND BROWN BROWN BROWN 2ND BAND GREEN YELLOW BLUE
LL-34 DO-35
THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL
FDLL333
High Conductance Low Leakage Diode
Sourced from Process 1M. See MMBD1501/A-1505/A for characteristics.
Absolute Maximum Ratings*
Symbol
W IV IO IF if if(surge) Working Inverse Voltage Average Rectified Current |
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FDH038AN08A1 | ![]() Fairchild Semiconductor |
N-Channel PowerTrench MOSFET FDH038AN08A1
February 2003
FDH038AN08A1
N-Channel PowerTrench® MOSFET 75V, 80A, 3.8mΩ
Features
• r DS(ON) = 3.5mΩ (Typ.), V GS = 10V, ID = 80A • Qg(tot) = 125nC (Typ.), VGS = 10V • Internal Gate Resistor, Rg = 20Ω (Typ.) • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101
Formerly developmental type 82690 SOURCE DRAIN GATE G D
Applications
• 42V Automotive Load Control • Starter / Alternator Systems • Electronic Power Steerin |
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FDH047AN08A0 | ![]() Fairchild Semiconductor |
N-Channel PowerTrench MOSFET 75V/ 80A/ 4.7m FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0
June 2004
FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0
N-Channel PowerTrench® MOSFET 75V, 80A, 4.7mΩ
Features
• rDS(ON) = 4.0mΩ (Typ.), VGS = 10V, ID = 80A • Qg(tot) = 92nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101
Formerly developmental type 82684
Applications
• 42V Automotive Load Control • Starter / Alternator Systems • Electronic Power Steering Systems • E |
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FDH055N15A | ![]() Fairchild Semiconductor |
MOSFET ( Transistor ) FDH055N15A — N-Channel PowerTrench® MOSFET
March 2015
FDH055N15A
N-Channel PowerTrench® MOSFET
150 V, 167 A, 5.9 mΩ
Features
• RDS(on) = 4.8 mΩ (Typ.) @ VGS = 10 V, ID = 120 A • Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state re |
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FDH1000 | ![]() Fairchild Semiconductor |
High Conductance Switching Diodes |
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FDH1040 | ![]() TOKO |
Fixed Inductors Fixed Inductors for Surface Mounting
FDH1040/FDH1040B
Inductance Range: 0.36~0.56µH
DIMENSIONS
FDH1040
11.2 4.0 Max. 2.55 (6.0) 2.55
FDH1040B
11.3 4.0 Max. 2.35 (6.6) 2.35
10.2
10.2
7.5
4.0
Tolerance : ±0.3 (Unit: mm)
Recommended patterns
FDH1040 FDH1040B
8.1
4.1
5.4
4.1 (Unit: mm)
3.8
6.0
3.8 (Unit: mm)
FEATURES
11.3×10.2mm square and 4.0mm Max. height. Magnetically shielded construction low DC resistance. Suitable for large current The use of magnetic metal alloy powder ensure |
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FDH1040B | ![]() TOKO |
Fixed Inductors |
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FDH15N50 | ![]() Fairchild Semiconductor |
15A/ 500V/ 0.38 Ohm/ N-Channel SMPS Power MOSFET FDH15N50 / FDP15N50 / FDB15N50
August 2003
FDH15N50 / FDP15N50 / FDB15N50
15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET
Applications
Switch Mode Power Supplies(SMPS), such as • PFC Boost • Two-Switch Forward Converter • Single Switch Forward Converter • Flyback Converter • Buck Converter • High Speed Switching
Features
• Low Gate Charge Requirement Qg results in Simple Drive
• Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness • Reduced rDS(ON) • Reduced Miller Capacitance and Low In |
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Последние обновления

Номер в каталоге | Производители | Описание | |
2N3904 | ![]() Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ![]() ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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