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даташит F15N05L IC Даташиты PDF |
| Номер в каталоге | Описание | Производители | ||
| 1 | F15N05L | PCF15N05L
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 General Electric Solid State |
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F15 даташита ( переписка ) |
| Номер в каталоге | Описание | Производители | |
| F153 | Diode |
 American Microsemiconductor |
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| F152 | Diode |
American Microsemiconductor |
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| F1510 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gol |
 Polyfet RF Devices |
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| F15 | Diode Switching 1.5KV 0.35A 2-Pin Case G-66 |
 New Jersey Semiconductor |
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| F1535A | Surface Mount Voltage Controlled Crystal Oscillators
F1535A Series
5V FR-4 Based Surface Mount Voltage Controlled Crystal Oscillators Applications: Clock Recovery; PLL; Optic Transmission Equipment; Digital Cross Connect Equipment FR-4 Based SMT -10ºC to 70ºC Operating Temperature "M" Mod |
 Champion |
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| F1516 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gol |
Polyfet RF Devices |
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| F1500NC250 | Extra Fast Recovery Diode
WESTCODE
An IXYS Company
Date:- 2 Oct, 2003 Data Sheet Issue:- 1
Provisional Data
Extra Fast Recovery Diode Type F1500NC250
Absolute Maximum Ratings
VRRM VRSM
VOLTAGE RATINGS
Repetitive peak reverse voltage, (note 1) Non-repetitive peak reverse voltage, (note 1 |
 IXYS |
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| F15F60C3M | Power MOSFET F15F60C3M
600V15A
特長
煙低オン抵抗 煙高速スイッチング 煙絶縁タイプ
Feature
煙 LowRON 煙 FastSwitching 煙 IsolatedPackage
PowerMOSFET
■外観図 OUTLINE Package：FTO-220A
0000
15F60C3M
Unit：mm
外形図については新電元 Webサイトをご |
 SHINDENGEN |
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| F1520 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gol |
Polyfet RF Devices |
|
| F1535 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gol |
Polyfet RF Devices |
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Последние обновления
| Номер в каталоге | Описание | Производители | |
| CD4515BC | The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors. |
 Fairchild Semiconductor |
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| HV101WU1-1E6 | HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices. |
 HYDIS |
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