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EL2140CN даташитФункция этой детали – «150 Mhz Differential Twisted Pair Driver». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
EL2140CN | Elantec |
150 MHz Differential Twisted Pair Driver EL2140C 2141C
EL2140C 2141C
150 MHz Differential Twisted Pair Driver
Features
Fully differential inputs outputs and feedback Differential input range g 2 3V 150 MHz 3 dB bandwidth 800 V ms slew rate b 55 dB distortion at 3 MHz b 75 dB distortion at 100 kHz g 5V supplies or a 6V single supply 50 mA minimum output current Output swing (200X load) to within 1 5V of supplies (14V pk-pk differential) Low power-11 mA typical supply current
General Description
The EL2140C 2141C is a very high bandwidth a |
Это результат поиска, начинающийся с "2140CN", "EL214" |
Номер в каталоге | Производители | Описание | |
2SA2140 | Inchange Semiconductor |
Silicon PNP Power Transistor INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA2140
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -180V(Min) ·Good Linearity of hFE
APPLICATIONS ·Designed for power amplification and for TV VM circuit.
ABSOLUTE MAXIMUM |
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2SA2140 | Panasonic Semiconductor |
Silicon PNP Epitaxial Transistor
Power Transistors
2SA2140
Silicon PNP epitaxial planar type
Unit: mm
3.0±0.5
For power amplification For TV VM circuit ■ Features
• Satisfactory linearity of forward current transfer ratio hFE • High transition frequency (fT) • Full-pack package wh |
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2SA2140 | New Jersey Semi-Conductor |
Silicon PNP Power Transistor C/
'J
, Unc.
TELEPHONE: (973) 376-2922
20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A.
(212)227-6005 FAX: (973) 376-8960
Silicon PNP Power Transistor
2SA2140
DESCRIPTION • Collector-Emitter Breakdown Voltage:V(BR)CEo=-180V(Min) • Good Linearity of hFE
1
ppf i
2
< |
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2SA2140 | New Jersey Semiconductor |
Trans GP BJT PNP 180V 1.5A 3-Pin(3+Tab) TO-220D-A1 |
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2SC2140 | SavantIC |
SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2140
DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·Switching regulator applications ·High speed DC-DC converter applications
PINNING (See Fig.2) PIN |
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2SD2140 | Inchange Semiconductor |
Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD2140
DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 140V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SB1421
APPLICATIONS ·Designed for high power amplifications. |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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