|
E28F020-150 даташитФункция этой детали – «28f020 2048k (256k X 8) Cmos Flash Memory». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
E28F020-150 | Intel Corporation |
28F020 2048K (256K X 8) CMOS FLASH MEMORY E
n n n n n n n
12.0 V ±5% VPP
28F020 2048K (256K X 8) CMOS FLASH MEMORY
n n n n
Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Noise Immunity Features ±10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing ETOX™ Nonvolatile Flash Technology EPROM-Compatible Process Base High-Volume Manufacturing Experience JEDEC-Standard Pinouts 32-Pin Plastic Dip 32-Lead PLCC 32-Lead TSOP
(See Packaging Spec., Order #231369)
Flash Electrical Ch |
Это результат поиска, начинающийся с "28F020", "E28F020-" |
Номер в каталоге | Производители | Описание | |
28F020 | Intel |
28F020 2048K (256K X 8) CMOS FLASH MEMORY E
n n n n n n n
12.0 V ±5% VPP
28F020 2048K (256K X 8) CMOS FLASH MEMORY
n n n n
Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Noise Immunity Features ±10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing ETOX |
|
Am28F020 | AMD |
2 Megabit CMOS 12.0 Volt Bulk Erase Flash Memory FINAL
Am28F020
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
DISTINCTIVE CHARACTERISTICS
s High performance — Access times as fast as 70 ns
s CMOS low power consumption — 30 mA maximum active current — 100 µA maximum standby current — No data retent |
|
Am28F020A | AMD |
2 Megabit CMOS 12.0 Volt Bulk Erase Flash Memory FINAL
Am28F020A
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
DISTINCTIVE CHARACTERISTICS
s High performance — Access times as fast as 70 ns
s CMOS low power consumption — 30 mA maximum active current — 100 µA maximum standby |
|
CAT28F020 | Catalyst Semiconductor |
2 Megabit CMOS Flash Memory CAT28F020
2 Megabit CMOS Flash Memory
Licensed Intel second source
FEATURES
s Fast read access time: 90/120 ns
s Low power CMOS dissipation: – Active: 30 mA max (CMOS/TTL levels) – Standby: 1 mA max (TTL levels) – Standby: 100 µA max (CMOS levels)
s High speed programmin |
|
E28F020-120 | Intel Corporation |
28F020 2048K (256K X 8) CMOS FLASH MEMORY E
n n n n n n n
12.0 V ±5% VPP
28F020 2048K (256K X 8) CMOS FLASH MEMORY
n n n n
Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Noise Immunity Features ±10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing ETOX |
|
E28F020-90 | Intel Corporation |
28F020 2048K (256K X 8) CMOS FLASH MEMORY E
n n n n n n n
12.0 V ±5% VPP
28F020 2048K (256K X 8) CMOS FLASH MEMORY
n n n n
Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Noise Immunity Features ±10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing ETOX |
[1]  
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |