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DTF16A60 даташитФункция этой детали – «Triacs». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
DTF16A60 | DnI |
Triacs
DTF16A60
UL No. E256958
Triac / Standard Gate
Symbol
Features
Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 16 A ) High Commutation dv/dt Isolation Voltage ( VISO = 2500V AC )
2.T2
BVDRM = 600V IT(RMS) = 16 A
3.Gate
1.T1
ITSM = 170 A TO-220F
General Description
This device is fully isolated package suitable for AC switching application, phase control application such as fan speed and temperature modulation control, industrial and domestic lighting control and stat |
Это результат поиска, начинающийся с "16A60", "DTF16" |
Номер в каталоге | Производители | Описание | |
F16A60CT | Thinki Semiconductor |
16.0 Ampere Heatsink Dual Common Cathode Fast Recovery Diode F16C20CT thru F16C60CT
®
F16C20CT thru F16C60CT
Pb
Pb Free Plating Product
16.0 Ampere Heatsink Dual Common Cathode Fast Recovery Diode
Feature Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge curren |
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FCF16A60 | ETC |
FRD |
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HBTA16A60 | SHANTOU HUASHAN |
INNER INSULATED TYPE TRIAC Shantou Huashan Electronic Devices Co.,Ltd.
HBTA16A60
INNER ¨€
INSULATED TYPE TRIAC (
II
TO - 220 PACKAGE)
Features
* Repetitive Peak Off-State Voltage: 600V * R.M.S On-state Current(IT(RMS)=16A) * High Commutation dv/dt *Isolation Voltage£¨ VISO =2500V AC£©
¨€
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HTP16A60H | SemiHow |
TRIAC HTP16A60H_HTP16A80H
HTP16A60H/HTP16A80H
3 Quadrants Standard TRIAC
FEATURES
Repetitive Peak Off-State Voltage : 600V/800V R.M.S On–State Current (IT(RMS) = 16A) Gate Trigger Current : 35mA High commutation capability.
VDRM = 600V/800V IT(RMS) = 16 A ITSM = 168 |
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HTS16A60H | SemiHow |
TRIAC HTS16A60H_HTS16A80H
HTS16A60H/HTS16A80H
3 Quadrants Standard TRIAC
FEATURES
Repetitive Peak Off-State Voltage : 600V/800V R.M.S On–State Current (IT(RMS) = 16A) Gate Trigger Current : 35mA High commutation capability.
VDRM = 600V/800V IT(RMS) = 16 A ITSM = 168 |
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K16A60W | Toshiba Semiconductor |
TK16A60W MOSFETs Silicon N-Channel MOS (DTMOS)
TK16A60W
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : DTMOS
(2) Easy to control Gate switching (3) Enhancement mode: Vth = |
[1]  
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |