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DFF2N60 даташитФункция этой детали – «2.4a, 600v, N-channel Mosfet». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
DFF2N60 | DnI |
2.4A, 600V, N-Channel MOSFET
DFF2N60
N-Channel MOSFET
Features
High ruggedness RDS(on) (Max 5.5 )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability 100% Avalanche Tested 1. Gate {
{ {
2. Drain
BVDSS = 600V RDS(ON) = 5.5 ohm ID = 2.4A
3. Source
General Description
This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche charac |
Это результат поиска, начинающийся с "2N60", "DFF2" |
Номер в каталоге | Производители | Описание | |
02N60P | ETC |
SSM02N60P
SSM02N60P
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Repetitive-avalanche rated Fast-switching Simple drive requirement
G D
BV DSS RDS(ON) ID TO-220
600V 8Ω 2A
Description
S
The TO-220 package is widely preferred for commercial and industrial applications. |
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02N60S5 | Infineon Technologies |
SPN02N60S5 SPN02N60S5 Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated
• Ultra
VDS RDS(on) ID
600 3 0.4
SOT-223
4
V Ω A
low effective capacitances
• Improved transconductance
2 |
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12N60 | nELL |
N-Channel Power MOSFET / Transistor SEMICONDUCTOR
I2N60 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET 12A, 600Volts
DESCRIPTION
The Nell 12N60 is a three-terminal silicon device with current conduction capability of 12A, fast switching speed, low on-state resistance, breakdown voltage rating of |
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12N60 | CHONGQING PINGYANG |
N-CHANNEL MOSFET 12N60(F,B,H)
12A mps,600 Volts N-CHANNEL MOSFET
FEATURE
12A,600V,RDS(ON)=0.7Ω@VGS=10V/6A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-220AB 12N60
ITO-220AB 12N60F
TO-263 12N60B
TO-262 12N60H
Absolute M |
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12N60 | Inchange Semiconductor |
N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
12N60
·FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V (Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.7Ω(Max) ·Avalanche Energy Specified ·Fast Switc |
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12N60 | Unisonic Technologies |
600/650 Volts N-CHANNEL MOSFET UNISONIC TECHNOLOGIES CO., LTD 12N60
12 Amps, 600/650 Volts N-CHANNEL MOSFET
Power MOSFET
DESCRIPTION
The UTC 12N60 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTC’s proprietary, planar stripe, DMOS t |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |