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даташит D2494 IC Даташиты PDF |
| Номер в каталоге | Описание | Производители | ||
| 1 | D2494 | 2SD2494 Equivalent circuit
C
Darlington
2SD2494
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=110V VEB=5V IC=30mA VCE=4V, IC=5A IC=5A, IB=5mA IC=5A, IB=5mA VCE=12V, IE=–0.5A VCB=10V, f=1MHz 2SD2494 100max 100max 110min 5000min∗ 2.5max 3.0max 60typ 55typ V V
16.2
B
(7 0 Ω )
E
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1625) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2494 110 110 5 6 1 60(Tc=25°C) 150 |
 Sanken electric |
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D даташита ( переписка ) |
| Номер в каталоге | Описание | Производители | |
| D-BY228G | Standard Si- Rectifier Didoes 62.5 ±0.5 Type 7.5 ±0.1
D-BY228G
Version 2012-04-04
Ø 4.5 ±0.1
Ø 1.2 ±0.05
Dimensions - Maße [mm]
D-BY228G
Standard Si- Rectifier Didoes Standard Si- Gleichrichter Dioden
Nominal Current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic c |
 Diotec |
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| D-BYW36 | Fast Silicon Rectifiers 62.5±0.5
Type
5.1-0.1
D-BYW36, D-BYW38 Version 2008-01-18
Ø 2.6-0.1
Ø 0.8±0.05
Dimensions - Maße [mm]
D-BYW36, D-BYW38
Fast Silicon Rectifiers Schnelle Si-Gleichrichter
Nominal Current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case |
Diotec |
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| D-BYW36 | FAST SILICON RECTIFIERS D-BYW36, D-BYW38
FAST SILICON RECTIFIERS
• Plastic material has UL Classification 94V-0 • Plastic case, DO-41
DO-41 0.8± 0.05
2.6-00.1
5.1-00.1 62.5± 0.05
Dimensions in mm
Absolute Maximum Ratings and Characteristics
Parameter
Symbols D-BYW36 D-BYW38 Units
Repetitiv |
 SEMTECH |
|
| D-BYW38 | FAST SILICON RECTIFIERS D-BYW36, D-BYW38
FAST SILICON RECTIFIERS
• Plastic material has UL Classification 94V-0 • Plastic case, DO-41
DO-41 0.8± 0.05
2.6-00.1
5.1-00.1 62.5± 0.05
Dimensions in mm
Absolute Maximum Ratings and Characteristics
Parameter
Symbols D-BYW36 D-BYW38 Units
Repetitiv |
SEMTECH |
|
| D10040220GT | GaAs Power Doubler
Product Specification
D10040220GT
GaAs Power Doubler, 40 – 1000MHz, 22.5dB min. Gain @ 1GHz, 375mA max. @ 24VDC
FEATURES
• • • • • • Excellent linearity Superior return loss performance Extremely low distortion Optimal reliability Low noise Un |
 PDI |
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| D1005 | 2SD1005 |
 Renesas |
|
| D1005UK | Metal Gate RF Silicon FET TetraFET
D1005UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A B C
1
2
D E
4 M
3
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 175MHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
F
G
H
K
I
J
• SUITABLE FOR BROAD BAND APPLICATIONS • LOW |
 Semelab PLC |
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| D1006 | 2SD1006 DATA SHEET
SILICON TRANSISTOR
2SD1006, 1007
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version. Not all products and/or types are availa |
Renesas |
|
| D1007 | 2SD1007 DATA SHEET
SILICON TRANSISTOR
2SD1006, 1007
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version. Not all products and/or types are availa |
Renesas |
|
| D1011 | METAL GATE RF SILICON FET TetraFET
D1011UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A N
8
D
1 2
C B P
7 6 5
3 4
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz SINGLE ENDED
FEATURES
H
K
L J E F G
M
• SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS
|
 Seme LAB |
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Последние обновления
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| CD4515BC | The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors. |
 Fairchild Semiconductor |
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 HYDIS |
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