D209L даташит ( Даташиты, Даташиты )

	Номер в каталоге	Описание	Производители	PDF
8	D209L	High Voltage Fast Switching NPN Power Transistor Free Datasheet http://www.datasheet-pdf.com/ Free Datasheet http://www.datasheet-pdf.com/ Free Datasheet http://www.datasheet-pdf.com/ Free Datasheet http://www.datasheet-pdf.com/ Free Datasheet http://www.datasheet-pdf.com/	Winsemi
7	D209L	Silicon NPN Power Transistor tJ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. , One.. Silicon NPN Power Transistor DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) • High Switching Speed • High Reliability APPLICATIONS • Switching regulators • Ultrasonic generators • High frequency inverters • General purpose power amplifiers TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 D209L i 1 23 PIN 1.BASE 2.COLLECTOR 3. BETTER TO-3PN package uQi ABSOLUTE MAXIMUM RATINGS(Ta=25r) SYMBOL P	New Jersey Semi-Conductor
6	D209L	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR NPN 型高压功率开关晶体管 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD209L 主要参数 MAIN CHARACTERISTICS IC VCEO PC 12A 400V 120W 封装 Package 用途 z 节能灯 z 电子镇流器 z 高频开关电源 z 高频功率变换 z 一般功率放大电路 APPLICATIONS z Energy-saving light z Electronic ballasts z High frequency switching power supply z High frequency power transform z Commonly power amplifier 产品特性 z高耐压 z高电流容量 z高开关速度 z高可靠性 z环保（RoHS	Jilin Sino
5	D209L	Case rated low frequency amplification bipolar transistor R 3DD 209L µÍÆµ·Å´ó¹Ü¿Ç¶î¶¨µÄË«¼«ÐÍ¾§Ìå¹Ü D209L ²úÆ·ÌØÐÔ ¡ô ¸ßÄÍÑ¹ ¡ô ¸ßµçÁ÷ÈÝÁ¿ ¡ô ¸ß¿ª¹ØËÙ¶È ¡ô ¸ß¿É¿¿ÐÔ Ö÷ÒªÓÃÍ¾ ¡ô ¸ßÆµ¿ª¹ØµçÔ´ ¡ô µç×ÓÕòÁ÷Æ÷ ¡ô ¸ßÆµ¹¦ÂÊ±ä»» ¡ô Ò»°ã¹¦ÂÊ·Å´óµçÂ· ÒýÏß¶ËÐòºÅ¼°µÈÐ§µçÂ·Í¼ ¸ÅÊö 3DD 209L ÊÇ NPN Ë«¼«ÐÍ´ó¹¦ÂÊ¾§Ìå¹Ü £¬ ÖÆÔìÖÐ²ÉÓÃ µÄÖ÷Òª¹¤ÒÕ¼¼ÊõÓÐ £º ¸ßÑ¹Æ½Ãæ¹¤	Jilin Sino
4	D209L	Silicon NPN Power Transistor INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability isc Product Specification D209L APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 9V IC Collector Cu	Inchange Semiconductor
3	D209L	Low-frequency amplification shell rated bipolar transistors R 3DD 209L µÍÆµ·Å´ó¹Ü¿Ç¶î¶¨µÄË«¼«ÐÍ¾§Ìå¹Ü D209L ²úÆ·ÌØÐÔ ¡ô ¸ßÄÍÑ¹ ¡ô ¸ßµçÁ÷ÈÝÁ¿ ¡ô ¸ß¿ª¹ØËÙ¶È ¡ô ¸ß¿É¿¿ÐÔ Ö÷ÒªÓÃÍ¾ ¡ô ¸ßÆµ¿ª¹ØµçÔ´ ¡ô µç×ÓÕòÁ÷Æ÷ ¡ô ¸ßÆµ¹¦ÂÊ±ä»» ¡ô Ò»°ã¹¦ÂÊ·Å´óµçÂ· ÒýÏß¶ËÐòºÅ¼°µÈÐ§µçÂ·Í¼ ¸ÅÊö 3DD 209L ÊÇ NPN Ë«¼«ÐÍ´ó¹¦ÂÊ¾§Ìå¹Ü £¬ ÖÆÔìÖÐ²ÉÓÃ µÄÖ÷Òª¹¤ÒÕ¼¼ÊõÓÐ £º	ETC
2	D209L	NPN Transistor	ATE
1	D209L	Transistor	ATE

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