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даташит D209L IC Даташиты PDF |
| Номер в каталоге | Описание | Производители | ||
| 8 | D209L | High Voltage Fast Switching NPN Power Transistor Free Datasheet http://www.datasheet-pdf.com/
Free Datasheet http://www.datasheet-pdf.com/
Free Datasheet http://www.datasheet-pdf.com/
Free Datasheet http://www.datasheet-pdf.com/
Free Datasheet http://www.datasheet-pdf.com/
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 Winsemi |
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| 7 | D209L | Silicon NPN Power Transistor tJ
20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A.
, One..
Silicon NPN Power Transistor
DESCRIPTION • High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min) • High Switching Speed • High Reliability
APPLICATIONS • Switching regulators • Ultrasonic generators • High frequency inverters • General purpose power amplifiers
TELEPHONE: (973) 376-2922 (212)227-6005
FAX: (973) 376-8960
D209L
i
1 23
PIN 1.BASE 2.COLLECTOR 3. BETTER TO-3PN package
uQi
ABSOLUTE MAXIMUM RATINGS(Ta=25r)
SYMBOL
P |
 New Jersey Semi-Conductor |
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| 6 | D209L | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR NPN 型高压功率开关晶体管 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
R
3DD209L
主要参数 MAIN CHARACTERISTICS
IC VCEO PC
12A 400V 120W
封装 Package
用途
z 节能灯 z 电子镇流器 z 高频开关电源 z 高频功率变换 z 一般功率放大电路
APPLICATIONS
z Energy-saving light z Electronic ballasts z High frequency switching power
supply z High frequency power transform z Commonly power amplifier
产品特性
z高耐压 z高电流容量 z高开关速度 z高可靠性 z环保（RoHS |
 Jilin Sino |
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| 5 | D209L | Case rated low frequency amplification bipolar transistor R
3DD 209L µÍƵ·Å´ó¹Ü¿Ç¶î¶¨µÄË«¼«Ð;§Ìå¹Ü
D209L ²úÆ·ÌØÐÔ
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¡ô ¸ßƵ¿ª¹ØµçÔ´
¡ô µç×ÓÕòÁ÷Æ÷ ¡ô ¸ßƵ¹¦Âʱ任 ¡ô Ò»°ã¹¦ÂÊ·Å´óµç· ÒýÏ߶ËÐòºÅ¼°µÈЧµç·ͼ ¸ÅÊö
3DD 209L ÊÇ NPN Ë«¼«ÐÍ´ó¹¦Âʾ§Ìå¹Ü £¬ ÖÆÔìÖвÉÓà µÄÖ÷Òª¹¤ÒÕ¼¼ÊõÓÐ £º ¸ßѹƽÃ湤 |
Jilin Sino |
|
| 4 | D209L | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability
isc Product Specification
D209L
APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
700 V
VCEO
Collector-Emitter Voltage
400 V
VEBO
Emitter-Base voltage
9V
IC Collector Cu |
 Inchange Semiconductor |
|
| 3 | D209L | Low-frequency amplification shell rated bipolar transistors
R
3DD 209L µÍƵ·Å´ó¹Ü¿Ç¶î¶¨µÄË«¼«Ð;§Ìå¹Ü
D209L ²úÆ·ÌØÐÔ
¡ô ¸ßÄÍѹ
¡ô ¸ßµçÁ÷ÈÝÁ¿ ¡ô ¸ß¿ª¹ØËÙ¶È ¡ô ¸ß¿É¿¿ÐÔ Ö÷ÒªÓÃ;
¡ô ¸ßƵ¿ª¹ØµçÔ´
¡ô µç×ÓÕòÁ÷Æ÷ ¡ô ¸ßƵ¹¦Âʱ任 ¡ô Ò»°ã¹¦ÂÊ·Å´óµç· ÒýÏ߶ËÐòºÅ¼°µÈЧµç·ͼ ¸ÅÊö
3DD 209L ÊÇ NPN Ë«¼«ÐÍ´ó¹¦Âʾ§Ìå¹Ü £¬ ÖÆÔìÖвÉÓà µÄÖ÷Òª¹¤ÒÕ¼¼ÊõÓÐ £º |
 ETC |
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| 2 | D209L | NPN Transistor |
 ATE |
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| 1 | D209L | Transistor |
ATE |
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На первой странице data sheets приводятся: |
| DataSheet26.com | 2020 | Контакты |