D209L даташит ( Даташиты, Даташиты )

Номер	Номер в каталоге	Описание	Производители	PDF
8	D209L	High Voltage Fast Switching NPN Power Transistor Free Datasheet http://www.datasheet-pdf.com/ Free Datasheet http://www.datasheet-pdf.com/ Free Datasheet http://www.datasheet-pdf.com/ Free Datasheet http://www.datasheet-pdf.com/ Free Datasheet http://www.datasheet-pdf.com/	Winsemi
7	D209L	Silicon NPN Power Transistor tJ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. , One.. Silicon NPN Power Transistor DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) • High Switching Speed • High Reliability APPLICATIONS • Switching regulators • Ultrasonic generators • High frequency inverters • General purpose power amplifiers TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 D209L i 1 23 PIN 1.BASE 2.COLLECTOR 3. BETTER TO-3PN package uQi ABSOLUTE MAXIMUM RATINGS(Ta=25r) SYMBOL P	New Jersey Semi-Conductor
6	D209L	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR NPN 型高压功率开关晶体管 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD209L 主要参数 MAIN CHARACTERISTICS IC VCEO PC 12A 400V 120W 封装 Package 用途 z 节能灯 z 电子镇流器 z 高频开关电源 z 高频功率变换 z 一般功率放大电路 APPLICATIONS z Energy-saving light z Electronic ballasts z High frequency switching power supply z High frequency power transform z Commonly power amplifier 产品特性 z高耐压 z高电流容量 z高开关速度 z高可靠性 z环保（RoHS	Jilin Sino
5	D209L	Case rated low frequency amplification bipolar transistor R 3DD 209L µÍÆµ·Å´ó¹Ü¿Ç¶î¶¨µÄË«¼«ÐÍ¾§Ìå¹Ü D209L ²úÆ·ÌØÐÔ ¡ô ¸ßÄÍÑ¹ ¡ô ¸ßµçÁ÷ÈÝÁ¿ ¡ô ¸ß¿ª¹ØËÙ¶È ¡ô ¸ß¿É¿¿ÐÔ Ö÷ÒªÓÃÍ¾ ¡ô ¸ßÆµ¿ª¹ØµçÔ´ ¡ô µç×ÓÕòÁ÷Æ÷ ¡ô ¸ßÆµ¹¦ÂÊ±ä»» ¡ô Ò»°ã¹¦ÂÊ·Å´óµçÂ· ÒýÏß¶ËÐòºÅ¼°µÈÐ§µçÂ·Í¼ ¸ÅÊö 3DD 209L ÊÇ NPN Ë«¼«ÐÍ´ó¹¦ÂÊ¾§Ìå¹Ü £¬ ÖÆÔìÖÐ²ÉÓÃ µÄÖ÷Òª¹¤ÒÕ¼¼ÊõÓÐ £º ¸ßÑ¹Æ½Ãæ¹¤	Jilin Sino
4	D209L	Silicon NPN Power Transistor INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability isc Product Specification D209L APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 9V IC Collector Cu	Inchange Semiconductor
3	D209L	Low-frequency amplification shell rated bipolar transistors R 3DD 209L µÍÆµ·Å´ó¹Ü¿Ç¶î¶¨µÄË«¼«ÐÍ¾§Ìå¹Ü D209L ²úÆ·ÌØÐÔ ¡ô ¸ßÄÍÑ¹ ¡ô ¸ßµçÁ÷ÈÝÁ¿ ¡ô ¸ß¿ª¹ØËÙ¶È ¡ô ¸ß¿É¿¿ÐÔ Ö÷ÒªÓÃÍ¾ ¡ô ¸ßÆµ¿ª¹ØµçÔ´ ¡ô µç×ÓÕòÁ÷Æ÷ ¡ô ¸ßÆµ¹¦ÂÊ±ä»» ¡ô Ò»°ã¹¦ÂÊ·Å´óµçÂ· ÒýÏß¶ËÐòºÅ¼°µÈÐ§µçÂ·Í¼ ¸ÅÊö 3DD 209L ÊÇ NPN Ë«¼«ÐÍ´ó¹¦ÂÊ¾§Ìå¹Ü £¬ ÖÆÔìÖÐ²ÉÓÃ µÄÖ÷Òª¹¤ÒÕ¼¼ÊõÓÐ £º	ETC
2	D209L	NPN Transistor	ATE
1	D209L	Transistor	ATE

Ссылка Поделиться :

[1]

Последние обновления

Номер в каталоге	Описание	Производители	PDF
CD4515BC	The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors. These circuits are primarily used in decoding applications where low power dissipation and/or high noise immunity is required.	Fairchild Semiconductor
HV101WU1-1E6	HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices. This module has a 10.1 inch diagonally measured active area with WUXGA resolutions (1920 horizontal by 1200 vertical pixel array).	HYDIS

На первой странице data sheets приводятся:
свойства компонента (features), его основные параметры (quick reference data), обозначение на принципиальных схемах (symbol), краткое описание (general description).

Index : 0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z ALL

D209L даташит ( Даташиты, Даташиты )

Последние обновления

DataSheet26.com | 2018 | Контакты