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даташит D1875 IC Даташиты PDF

Номер в каталоге Описание Производители PDF
1 D1875   NPN EPITAXIAL SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 2SD1857 POWER TRANSISTOR „ FEATURES NPN EPITAXIAL SILICON TRANSISTOR * High breakdown voltage.(BVCEO=120V) * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) „ ORDERING INFORMATION Pin Assignment 1 2 3 E C B E C B E C B E C B E C B Packing Tape Box Bulk Tape Reel Tape Box Bulk Ordering Number Package Lead Free Halogen Free 2SD1875L-x-T92-B 2SD1875G-x-T92-B TO-92 2SD1875L-x-T92-K 2SD1875G-x-T92-K TO-92 2SD1875L-x- T92-R 2SD1875G-x- T92-R T
Unisonic Technologies
Unisonic Technologies
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D даташита ( переписка )

Номер в каталоге Описание Производители PDF
D-BY228G

Standard Si- Rectifier Didoes

62.5 ±0.5 Type 7.5 ±0.1 D-BY228G Version 2012-04-04 Ø 4.5 ±0.1 Ø 1.2 ±0.05 Dimensions - Maße [mm] D-BY228G Standard Si- Rectifier Didoes Standard Si- Gleichrichter Dioden Nominal Current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic c
Diotec
Diotec
pdf
D-BYW36

Fast Silicon Rectifiers

62.5±0.5 Type 5.1-0.1 D-BYW36, D-BYW38 Version 2008-01-18 Ø 2.6-0.1 Ø 0.8±0.05 Dimensions - Maße [mm] D-BYW36, D-BYW38 Fast Silicon Rectifiers Schnelle Si-Gleichrichter Nominal Current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case
Diotec
Diotec
pdf
D-BYW36

FAST SILICON RECTIFIERS

D-BYW36, D-BYW38 FAST SILICON RECTIFIERS • Plastic material has UL Classification 94V-0 • Plastic case, DO-41 DO-41 0.8± 0.05 2.6-00.1 5.1-00.1 62.5± 0.05 Dimensions in mm Absolute Maximum Ratings and Characteristics Parameter Symbols D-BYW36 D-BYW38 Units Repetitiv
SEMTECH
SEMTECH
pdf
D-BYW38

FAST SILICON RECTIFIERS

D-BYW36, D-BYW38 FAST SILICON RECTIFIERS • Plastic material has UL Classification 94V-0 • Plastic case, DO-41 DO-41 0.8± 0.05 2.6-00.1 5.1-00.1 62.5± 0.05 Dimensions in mm Absolute Maximum Ratings and Characteristics Parameter Symbols D-BYW36 D-BYW38 Units Repetitiv
SEMTECH
SEMTECH
pdf
D10040220GT

GaAs Power Doubler

Product Specification D10040220GT GaAs Power Doubler, 40 – 1000MHz, 22.5dB min. Gain @ 1GHz, 375mA max. @ 24VDC FEATURES • • • • • • Excellent linearity Superior return loss performance Extremely low distortion Optimal reliability Low noise Un
PDI
PDI
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D1005

2SD1005

Renesas
Renesas
pdf
D1005UK

Metal Gate RF Silicon FET

TetraFET D1005UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 D E 4 M 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 175MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN F G H K I J • SUITABLE FOR BROAD BAND APPLICATIONS • LOW
Semelab PLC
Semelab PLC
pdf
D1006

2SD1006

DATA SHEET SILICON TRANSISTOR 2SD1006, 1007 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are availa
Renesas
Renesas
pdf
D1007

2SD1007

DATA SHEET SILICON TRANSISTOR 2SD1006, 1007 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are availa
Renesas
Renesas
pdf
D1015UK

METAL GATE RF SILICON FET

TetraFET D1015UK METAL GATE RF SILICON FET MECHANICAL DATA B (4 pls) C G (typ) 2 1 A D 3 E 5 I F 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 125W – 28V – 400MHz PUSH–PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN N M H J K • SUITABLE FOR BROAD BAND APP
Seme LAB
Seme LAB
pdf



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Последние обновления

Номер в каталоге Описание Производители PDF
CD4515BC

The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors.

Fairchild Semiconductor
Fairchild Semiconductor
pdf
HV101WU1-1E6

HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices.

HYDIS
HYDIS
pdf

На первой странице data sheets приводятся:
свойства компонента (features), его основные параметры (quick reference data), обозначение на принципиальных схемах (symbol), краткое описание (general description).



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