даташит D1875 IC Даташиты PDF

	Номер в каталоге	Описание	Производители	PDF
1	D1875	NPN EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2SD1857 POWER TRANSISTOR FEATURES NPN EPITAXIAL SILICON TRANSISTOR * High breakdown voltage.(BVCEO=120V) * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) ORDERING INFORMATION Pin Assignment 1 2 3 E C B E C B E C B E C B E C B Packing Tape Box Bulk Tape Reel Tape Box Bulk Ordering Number Package Lead Free Halogen Free 2SD1875L-x-T92-B 2SD1875G-x-T92-B TO-92 2SD1875L-x-T92-K 2SD1875G-x-T92-K TO-92 2SD1875L-x- T92-R 2SD1875G-x- T92-R T	Unisonic Technologies

D даташита ( переписка )

Номер в каталоге	Описание	Производители	PDF
D-BY228G	Standard Si- Rectifier Didoes 62.5 ±0.5 Type 7.5 ±0.1 D-BY228G Version 2012-04-04 Ø 4.5 ±0.1 Ø 1.2 ±0.05 Dimensions - Maße [mm] D-BY228G Standard Si- Rectifier Didoes Standard Si- Gleichrichter Dioden Nominal Current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic c	Diotec
D-BYW36	Fast Silicon Rectifiers 62.5±0.5 Type 5.1-0.1 D-BYW36, D-BYW38 Version 2008-01-18 Ø 2.6-0.1 Ø 0.8±0.05 Dimensions - Maße [mm] D-BYW36, D-BYW38 Fast Silicon Rectifiers Schnelle Si-Gleichrichter Nominal Current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case	Diotec
D-BYW36	FAST SILICON RECTIFIERS D-BYW36, D-BYW38 FAST SILICON RECTIFIERS • Plastic material has UL Classification 94V-0 • Plastic case, DO-41 DO-41 0.8± 0.05 2.6-00.1 5.1-00.1 62.5± 0.05 Dimensions in mm Absolute Maximum Ratings and Characteristics Parameter Symbols D-BYW36 D-BYW38 Units Repetitiv	SEMTECH
D-BYW38	FAST SILICON RECTIFIERS D-BYW36, D-BYW38 FAST SILICON RECTIFIERS • Plastic material has UL Classification 94V-0 • Plastic case, DO-41 DO-41 0.8± 0.05 2.6-00.1 5.1-00.1 62.5± 0.05 Dimensions in mm Absolute Maximum Ratings and Characteristics Parameter Symbols D-BYW36 D-BYW38 Units Repetitiv	SEMTECH
D10040220GT	GaAs Power Doubler Product Specification D10040220GT GaAs Power Doubler, 40 – 1000MHz, 22.5dB min. Gain @ 1GHz, 375mA max. @ 24VDC FEATURES • • • • • • Excellent linearity Superior return loss performance Extremely low distortion Optimal reliability Low noise Un	PDI
D1005	2SD1005	Renesas
D1005UK	Metal Gate RF Silicon FET TetraFET D1005UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 D E 4 M 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 175MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN F G H K I J • SUITABLE FOR BROAD BAND APPLICATIONS • LOW	Semelab PLC
D1006	2SD1006 DATA SHEET SILICON TRANSISTOR 2SD1006, 1007 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are availa	Renesas
D1007	2SD1007 DATA SHEET SILICON TRANSISTOR 2SD1006, 1007 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are availa	Renesas
D1015UK	METAL GATE RF SILICON FET TetraFET D1015UK METAL GATE RF SILICON FET MECHANICAL DATA B (4 pls) C G (typ) 2 1 A D 3 E 5 I F 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 125W – 28V – 400MHz PUSH–PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN N M H J K • SUITABLE FOR BROAD BAND APP	Seme LAB

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Номер в каталоге	Описание	Производители	PDF
CD4515BC	The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors.	Fairchild Semiconductor
HV101WU1-1E6	HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices.	HYDIS

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