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даташит D1858 IC Даташиты PDF |
| Номер в каталоге | Описание | Производители | ||
| 1 | D1858 | 2SD1858 Transistors
Medium Power Transistor (32V, 1A)
2SD1664 / 2SD1858
FFeatures 1) Low VCE(sat), VCE(sat) = 0.15V (typical). (IC / IB = 500mA / 50mA) 2) Complements the 2SB1132 / 2SB1237. FStructure Epitaxial planar type NPN silicon transistor
FExternal dimensions (Units: mm)
FAbsolute maximum ratings (Ta = 25_C)
(96-207-D12)
249
Transistors
FElectrical characteristics (Ta = 25_C)
2SD1664 / 2SD1858
FPackaging specifications and hFE
hFE values are classified as follows :
FEle |
 ROHM Electronics |
 |
D даташита ( переписка ) |
| Номер в каталоге | Описание | Производители | |
| D1094UK | METAL GATE RF SILICON FET TetraFET
D1094UK
METAL GATE RF SILICON FET
MECHANICAL DATA
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 400MHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW |
 Seme LAB |
 |
| D10FDC10ST | Schottky Barrier Diode 5XJO 4DIPUULZ#BSSJFS%JPEF
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10FDC10T
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 SHINDENGEN |
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| D10FS | Fixed Inductors Fixed Inductors for Surface Mounting
D10FS
Inductance Range: 10~1200µH
Recommended patterns
DIMENSIONS
9.7 Max. 2.8 3.5 Max. 1.05 1.0
12.0 8.6
11.5 Max.
9.0
1.7 2.3
Direction indication
(Unit: mm)
FEATURES
• Low profile (9.7×11.5mm Max. square and 3.5mm Max. height) |
 TOKO |
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| D10JBB60V | Bridge Diode SIP
D10JBB60V
600V10A
特長
煙高耐圧 煙低背タイプ 煙 UL１４２４２２
Feature
煙 HighVoltage 煙 Low Height 煙 UL142422
BridgeDiode
■外観図 OUTLINE Package：JB
D10JB 60 0000
Unit：mm
外形図については新電元 Webサイトをご参照下さい |
SHINDENGEN |
|
| D10JBB80V | Bridge Diode SIP
D10JBB80V
800V10A
特長
煙高耐圧 煙低背タイプ 煙 UL１４２４２２
Feature
煙 HighVoltage 煙 Low Height 煙 UL142422
BridgeDiode
■外観図 OUTLINE Package：JB
D10JB 80 0000
Unit：mm
外形図については新電元 Webサイトをご参照下さい |
SHINDENGEN |
|
| D10PS50 | SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
FEATURES
z Super long operating life z Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
MECHANICAL DATA
z Case: TO-277B molded plastic body z Mounting position: ANY
Maximum Ratings(@TA = 25°C unless otherwise |
 Galaxy Microelectronics |
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| D10SB100 | Molding Single-Phase Bridge Rectifier Elektronische Bauelemente
D10SB10 ~ D10SB100
100 V ~ 1000 V 10.0 Amp High Current Glass Passivated
Molding Single-Phase Bridge Rectifier
RoHS Compliant Product A suffix of “-C” specifies halogen-free and RoHS Compliant
FEATURES
Plastic Package has Underwriters Laborat |
 SeCoS |
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| D10SB20 | 10A(SIP) BRIDGE RECTIFIERS |
 Leshan Radio Company |
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| D10SB20 | SINGLE PHASE GLASS PASSIVATED SIP BRIDGE RECTIFIER SHANGHAI SUNRISE ELECTRONICS CO., LTD. D10SB10 THRU D10SB100
SINGLE PHASE GLASS PASSIVATED SIP BRIDGE RECTIFIER
VOLTAGE: 100 TO 1000V CURRENT: 10A
FEATURES
• Glass passivated junction chip • Ideal for printed circuit board • Reliable low cost construction utilizing molded p |
 Shanghai Sunrise Electronics |
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| D10SB20 | (D10SB20 - D10SB80) Single-phase Silicon Bridge Rectifier SIYU R
塑封硅整流桥堆
反向电压 200---800V 正向电流 10 A
D5
3.0*45 0 30.3 29.7 4.8 4.4 3.8 3.4
D10SB20......D10SB80
Single-phase Silicon Bridge Rectifier
Reverse Voltage 200 to 800V Forward Current 10A 特征 Features
·反向漏电流低 Low reverse leakage High f |
 SIYU |
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| DataSheet26.com | 2020 | Контакты |