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даташит D1804 IC Даташиты PDF |
| Номер в каталоге | Описание | Производители | ||
| 1 | D1804 | 2SD1804 Ordering number:ENN2086B
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1204/2SD1804
High-Current Switching Applications
Applications
Æ Relay drivers, high-speed inverters, converters, and other general high-current switching applications.
Package Dimensions
unit:mm 2045B
[2SB1204/2SD1804]
1.5
Features
Æ Low collector-to-emitter saturation voltage. Æ High current and high fT. Æ Excellent linearity of hFE. Æ Fast switching time. Æ Small and slim package making it easy to make 2SB1204/2SD1804-applied sets small |
 Sanyo Semicon Device |
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D даташита ( переписка ) |
| Номер в каталоге | Описание | Производители | |
| D-BY228G | Standard Si- Rectifier Didoes 62.5 ±0.5 Type 7.5 ±0.1
D-BY228G
Version 2012-04-04
Ø 4.5 ±0.1
Ø 1.2 ±0.05
Dimensions - Maße [mm]
D-BY228G
Standard Si- Rectifier Didoes Standard Si- Gleichrichter Dioden
Nominal Current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic c |
 Diotec |
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| D-BYW36 | Fast Silicon Rectifiers 62.5±0.5
Type
5.1-0.1
D-BYW36, D-BYW38 Version 2008-01-18
Ø 2.6-0.1
Ø 0.8±0.05
Dimensions - Maße [mm]
D-BYW36, D-BYW38
Fast Silicon Rectifiers Schnelle Si-Gleichrichter
Nominal Current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case |
Diotec |
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| D-BYW36 | FAST SILICON RECTIFIERS D-BYW36, D-BYW38
FAST SILICON RECTIFIERS
• Plastic material has UL Classification 94V-0 • Plastic case, DO-41
DO-41 0.8± 0.05
2.6-00.1
5.1-00.1 62.5± 0.05
Dimensions in mm
Absolute Maximum Ratings and Characteristics
Parameter
Symbols D-BYW36 D-BYW38 Units
Repetitiv |
 SEMTECH |
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| D-BYW38 | FAST SILICON RECTIFIERS D-BYW36, D-BYW38
FAST SILICON RECTIFIERS
• Plastic material has UL Classification 94V-0 • Plastic case, DO-41
DO-41 0.8± 0.05
2.6-00.1
5.1-00.1 62.5± 0.05
Dimensions in mm
Absolute Maximum Ratings and Characteristics
Parameter
Symbols D-BYW36 D-BYW38 Units
Repetitiv |
SEMTECH |
|
| D10040220GT | GaAs Power Doubler
Product Specification
D10040220GT
GaAs Power Doubler, 40 – 1000MHz, 22.5dB min. Gain @ 1GHz, 375mA max. @ 24VDC
FEATURES
• • • • • • Excellent linearity Superior return loss performance Extremely low distortion Optimal reliability Low noise Un |
 PDI |
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| D1005 | 2SD1005 |
 Renesas |
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| D1005UK | Metal Gate RF Silicon FET TetraFET
D1005UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A B C
1
2
D E
4 M
3
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 175MHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
F
G
H
K
I
J
• SUITABLE FOR BROAD BAND APPLICATIONS • LOW |
 Semelab PLC |
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| D1006 | 2SD1006 DATA SHEET
SILICON TRANSISTOR
2SD1006, 1007
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version. Not all products and/or types are availa |
Renesas |
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| D1007 | 2SD1007 DATA SHEET
SILICON TRANSISTOR
2SD1006, 1007
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version. Not all products and/or types are availa |
Renesas |
|
| D1015UK | METAL GATE RF SILICON FET TetraFET
D1015UK
METAL GATE RF SILICON FET
MECHANICAL DATA
B (4 pls) C G (typ)
2 1
A D
3
E
5
I F
4
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 125W – 28V – 400MHz PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
N
M
H
J
K
• SUITABLE FOR BROAD BAND APP |
 Seme LAB |
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Последние обновления
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| CD4515BC | The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors. |
 Fairchild Semiconductor |
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| HV101WU1-1E6 | HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices. |
 HYDIS |
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